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PerkinElmer Optoelectronics |
IR Blocking Silicon Photodiode Circuit Voltage @ 100fc Peak Spectral Response Sensitivity @ peak Angular Response (50% Point) Sym Isc ID CJ VOC Min. 0.7 Typ. 280 550 0.27 ± 70 www.DataSheet4U.com λPK SR θ1/2 Max. 10 18 - Units µA nA pF mV nm A/W Degrees Table 2: Absolute Maxi |
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PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators Our outstanding engineering staff, coupled with the implementation of modern material control and manufacturing techniques, plus our commitment to quality, has gained PerkinElmer “certified” status with many major customers. Products are often shippe |
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PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators (Vactrols) Our outstanding engineering staff, coupled with the implementation of modern material control and manufacturing techniques, plus our commitment to quality, has gained PerkinElmer “certified” status with many major customers. Products are often shippe |
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PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators (Vactrols) Our outstanding engineering staff, coupled with the implementation of modern material control and manufacturing techniques, plus our commitment to quality, has gained PerkinElmer “certified” status with many major customers. Products are often shippe |
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PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators Our outstanding engineering staff, coupled with the implementation of modern material control and manufacturing techniques, plus our commitment to quality, has gained PerkinElmer “certified” status with many major customers. Products are often shippe |
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PerkinElmer Optoelectronics |
VTB Process Photodiodes 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±15 3.0 x 10-14 (Typ.) 4.2 x 10 12 (Typ.) 2 .25 -8.0 .31 .19 1100 320 920 40 ±15 5.9 x 10-15 (Typ.) 2.1 x 10 13 (Typ.) 30 Typ. 60 .12 490 -2.0 10 |
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PerkinElmer Optoelectronics |
VTB Process Photodiodes fic Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = -10 mV H = 0, V = -10 mV H = 0, V = 0 365 nm 220 nm .038 200 920 40 ±50 2.1 x 10-14 (Typ.) 1.8 x 10 13 (Typ.) 1100 .56 -8.0 3.0 0. |
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PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes ISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min. VTE1063 3.8 Typ. 5.0 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 49 Total Power PO mW Typ. 80 Test Current IFT mA (Pulsed) |
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PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes AL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min. VTE1261 VTE1262 3.0 4.0 Typ. 3.9 5.2 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 39 52 Total Power PO m |
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PerkinElmer Optoelectronics |
VTP Process Photodiodes VR = 50 V H = 0, V = 10 mV H = 0, V = 15 V 940 nm @ Peak 400 925 140 ±35 8.7 x 10-14 (Typ.) 1.5 x 10 12 (Typ.) .011 .55 1150 .5 6 10 Typ. 17 .20 350 -2.0 7 Max. µA %/°C mV mV/°C nA GΩ pF A/(W/cm2) A/W nm nm V Degrees W ⁄ Hz cm Hz / W UNITS PerkinElm |
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PerkinElmer Optoelectronics |
VTP Process Photodiodes the largest detection area available in a clear, endlooking T-1¾ package. Combined with excellent dark current, it can fulfill the demands of many difficult applications. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to |
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PerkinElmer Optoelectronics |
.050 NPN Phototransistors 5) 100 (5) Dark Current lCEO H=0 (nA) Max. 25 25 25 VCE (Volts) 20 20 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 40 30 20 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 6.0 6.0 4.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = |
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PerkinElmer Optoelectronics |
VTB Process Photodiodes ectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 ±55 1.0 x 10-13 (Typ.) 6.1 x 10 12 (Typ.) .10 -8.0 8.0 720 26 VTB6061BH Typ. 35 .02 420 - |
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PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators Our outstanding engineering staff, coupled with the implementation of modern material control and manufacturing techniques, plus our commitment to quality, has gained PerkinElmer “certified” status with many major customers. Products are often shippe |
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PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators (Vactrols) Our outstanding engineering staff, coupled with the implementation of modern material control and manufacturing techniques, plus our commitment to quality, has gained PerkinElmer “certified” status with many major customers. Products are often shippe |
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PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators Our outstanding engineering staff, coupled with the implementation of modern material control and manufacturing techniques, plus our commitment to quality, has gained PerkinElmer “certified” status with many major customers. Products are often shippe |
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PerkinElmer Optoelectronics |
VTB Process Photodiodes 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = O, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±35 3.0 x 10-14 (Typ.) 4.2 x 10 12 (Typ.) VTB1013 UNITS Max. .23 Min. 8 Typ. 13 .12 490 -2.0 100 20 7.0 -8.0 .31 .09 1100 320 920 2 40 ±35 5.9 x |
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PerkinElmer Optoelectronics |
VTB Process Photodiodes DITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 ±35 5.3 x 10-14 (Typ.) 2.4 x 10 12 (Typ.) 2 .25 -8.0 .31 720 330 580 40 ±35 1.1 x 10 -14 (Typ.) 1.2 x 10 13 ( |
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PerkinElmer Optoelectronics |
VTB Process Photodiodes 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±15 3.0 x 10-14 (Typ.) 4.2 x 10 12 (Typ.) 2 .25 -8.0 .31 .19 1100 320 920 40 ±15 5.9 x 10-15 (Typ.) 2.1 x 10 13 (Typ.) 30 Typ. 60 .12 490 -2.0 10 |
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PerkinElmer Optoelectronics |
VTB Process Photodiodes n. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 ±55 1.0 x 10-13 (Typ.) 6.1 x 10 12 (Typ.) .10 -8.0 8.0 720 26 Typ. 35 .02 420 -2.0 2.0 .08 Max. µA %/°C mV mV/°C nA GΩ |
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Desde 2024. D4U Semiconductor.
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