| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Panasonic Semiconductor |
GaAs Hall Device • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Sealed in the Mi |
|
|
|
|
Panasonic Semiconductor |
GaAs Hall Device • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Mini type (4-pin |
|
|
|
|
Panasonic Semiconductor |
GaAs Hall Device 1 OH10008 PD T a 200 180 240 B = 1 kG IC = 6 mA 200 GaAs Hall Devices VH Ta 1 600 1 400 RIN Ta B=0 IC = 1 mA Power dissipation PD (mW) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Input resistance RIN (Ω) −40 Hall voltage |
|
|
|
|
Panasonic Semiconductor |
GaAs Hall Device • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Sealed in the Mi |
|
|
|
|
Panasonic Semiconductor |
GaAs Hall Device • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Mini type (4-pin |
|
Desde 2024. D4U Semiconductor.
|