Panasonic Semiconductor DRA Hoja de datos

No.	parte #	Fabricante	Descripción
1	DRA5113Z0L	Panasonic Semiconductor	Silicon PNP epitaxial planar type  Low collector-emitter saturation voltage Vce(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 Unit: mm 2.0 0.3 3 0.13 1.25 2.1 0.9 (0.65) (0.65) 1.3  Marking Symbol: L1  Packaging Embossed type (Thermo-co
2	AN6095SH	Panasonic Semiconductor	Reception IF + transmission quadrature modulation IC for PHS and cellular telephone connections shown enable the device to debounce any signal. The internal one-shot provides an instant response to the first falling edge on the input and then delays any further response until 140msec after the last rising edge. The MAX812 shown inv
3	DRA5143E	Panasonic Semiconductor	Silicon PNP epitaxial planar type  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm  Marking Symbol: L5  Packaging DRA5143E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (st
4	DRA5124E	Panasonic Semiconductor	Silicon PNP epitaxial planar type  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm  Marking Symbol: LE  Packaging DRA5124E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (st
5	LNJ810L6DRA	Panasonic Semiconductor	Surface Mounting Chip LED
6	LNJ812K8SRA	Panasonic Semiconductor	LNJ212R8ARA LNJ312G8LRA LNJ312G8TRA LNJ412K8YRA LNJ812R8DRA LNJ812K8SRA Min 2.2 1.5 1.8 0.6 0.4 0.4 mcd IF 10 5 10 10 10 10 mA Typ 1.72 1.9 2.03 2.0 1.93 1.93 V VF Max 2.5 2.4 2.6 2.6 2.6 2.6 V IF  VF λP Typ 655 565 565 59. 630 610 nm ∆λ Typ 20 30 30 30 40 40 nm IF 10 5 10 10 10 10 mA IO  Ta Max 100 10 10 10 10
7	LNJ812R8DRA	Panasonic Semiconductor	Surface Mounting Chip LED