Panasonic Semiconductor D25 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SD2530	Panasonic Semiconductor	Silicon NPN triple diffusion planer type Transistor • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 2.5 V 2.5±0.1 1.2±0.1 1.48±0.2 90° C 1.0 2.25±0.2 18.0±0.5 Solder Dip 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0
2	D2544	Panasonic Semiconductor	2SD2544 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 60 60 7 8 4 15 2 150 –55 to +150 Unit
3	2SD2549	Panasonic Semiconductor	Silicon NPN Transistor q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 80 6 5 3 20 2
4	D2573	Panasonic Semiconductor	2SD2573 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open)
5	2SD2528	Panasonic Semiconductor	Silicon NPN Transistor q q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 10 5 1 40 2
6	2SD2538	Panasonic Semiconductor	Silicon NPN Transistor • High forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 I Absolute Maximum Ratings TC = 25°C Parameter C
7	2SD2527	Panasonic Semiconductor	Silicon NPN Transistor q q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 8 4 1 40 2.
8	2SD2544	Panasonic Semiconductor	Silicon NPN Transistor 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 60 60 7 8 4 15 2 150 –55 to +150 Unit
9	2SD2598	Panasonic Semiconductor	Silicon NPN Transistor 0.65 max. 1.0 1.0 0.2 Unit nA nA V V V VCE(sat) VBE(sat) fT V V MHz Rank classification Q R 4000 ~ 10000 8000 ~ 20000 Pulse measurement Rank hFE 1 Transistor PC — Ta 2.0 900 Printed circut board: Copper foil area of 1cm2 or more, and the b
10	2SD2504	Panasonic Semiconductor	Silicon NPN epitaxial planar type Transistor 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-e
11	D2530	Panasonic Semiconductor	2SD2530 • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 2.5 V 2.5±0.1 1.2±0.1 1.48±0.2 90° C 1.0 2.25±0.2 18.0±0.5 Solder Dip 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0
12	D2504	Panasonic Semiconductor	2SD2504 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collec
13	2SD2556	Panasonic Semiconductor	Silicon NPN Transistor • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 0.5 V 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 0.8 max. 2.5±0.1 0.75±0.1 2.3±0.1 4.6±0
14	2SD2565	Panasonic Semiconductor	Silicon NPN Transistor q q q q q High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as
15	2SD2575	Panasonic Semiconductor	Silicon NPN Transistor 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO –92 EIAJ:SC –43A time: t = 380µsec s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitt
16	D2527	Panasonic Semiconductor	2SD2527 q High foward current transfer ratio hFE q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Colle
17	2SD2573	Panasonic Semiconductor	Silicon NPN triple diffusion planar type Transistor 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open)
18	MA2SD25	Panasonic Semiconductor	Silicon epitaxial planar type 1 Publication date: August 2001 SKH00029AED 1 MA2SD25 IF  V F 103 Ta = 125°C 102 104 75°C 25°C −20°C 105 IR  V R 40 35 Ct  VR Ta = 25°C Forward current IF (mA) Reverse current IR (µA) Ta = 125°C 103 75°C 10 2 Terminal capacitance Ct (pF