| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
2SC5346 q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q 0.4 0.8±0.1 0.4 0.2 –0.05 0.15 –0.05 +0.1 High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0. |
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Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Panasonic Semiconductor |
2SC5378 q q q q 2.1±0.1 0.425 1.25±0.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0. |
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Panasonic Semiconductor |
2SC5380 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
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Panasonic Semiconductor |
NPN Transistor 100 30 ICP 10 IC 3 1 0.3 0.1 0.03 0.01 0.003 0.001 1 3 ASO t=100µs t=10ms 1ms DC 10 30 100 300 1000 VCE (V) IC (A) IC (A) ASO 25 f=64kHz, TC<90°C 20 15 10 5 <1mA 0 0 500 1000 1500 2000 VCE (V) 2SC5381 2 httpの://wwしwは.てsホemー、icムonペ. |
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Panasonic Semiconductor |
NPN Transistor 100 30 ICP 10 IC 3 1 0.3 0.1 0.03 0.01 0.003 0.001 1 3 ASO t=100µs t=10ms 1ms DC 10 30 100 300 1000 VCE (V) IC (A) IC (A) ASO 25 f=64kHz, TC<90°C 20 15 10 5 <1mA 0 0 500 1000 1500 2000 VCE (V) 2SC5381 2 httpの://wwしwは.てsホemー、icムonペ. |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q 2.1±0.1 0.425 1.25±0.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0. |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q 0.4 0.8±0.1 0.4 0.2 –0.05 0.15 –0.05 +0.1 Low noise figure NF. High gain. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 |
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Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Panasonic Semiconductor |
NPN TRANSISTOR q q 0.65 max. 1.0 1.0 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak coll |
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Panasonic Semiconductor |
NPN Transistor • High-speed switching • High collector to base voltage VCBO • Wide area of safe operation (ASO) • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one / screw 14.0±0.5 So |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to |
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Desde 2024. D4U Semiconductor.
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