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Panasonic Semiconductor |
2SC5294 φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 www.DataSheet4U.com 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO I |
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Panasonic Semiconductor |
Silicon NPN Transistor 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) 1.5 26.0±0.5 / 2.0±0.3 2.0 1.5 1 |
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Panasonic Semiconductor |
2SC5243 q q q 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current www.DataSheet4U.com 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC= |
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Panasonic Semiconductor |
2SC5270 φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5270 2SC5270A 2SC5270 2SC5270A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC T |
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Panasonic Semiconductor |
2SC5223 q High collector to base voltage VCBO q High collector to emitter VCEO s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector |
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Panasonic Semiconductor |
NPN TRANSISTOR q q 0.65±0.15 1.5 –0.05 +0.25 0.65±0.15 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature |
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Panasonic Semiconductor |
2SC5244 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) 1.5 26.0±0.5 / 2.0±0.3 2.0 1.5 1 |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Peak base current Collector power TC=25°C dissipation Ta=25°C Ju |
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Panasonic Semiconductor |
NPN TRANSISTOR φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5270 2SC5270A 2SC5270 2SC5270A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC T |
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Panasonic Semiconductor |
NPN TRANSISTOR • High transition frequency fT • Low collector output capacitance Cob • SS-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 0.2+0.1 –0.05 3 0.15+0.1 –0.05 0.8±0.1 1.6±0.15 1° 1 (0.5) (0.5) |
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Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC T |
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Panasonic Semiconductor |
NPN TRANSISTOR Unit µA µA V V V 1.0 1.5 V V 1 Power Transistors PC — Ta 12 Without heat sink 600 Ta=25˚C 500 2SC5223 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 3 1 TC=100˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 0.001 0.003 V |
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Panasonic Semiconductor |
Silicon NPN Transistor 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) 1.5 26.0±0.5 / 2.0±0.3 2.0 1.5 1 |
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Panasonic Semiconductor |
NPN TRANSISTOR φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5270 2SC5270A 2SC5270 2SC5270A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC T |
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Desde 2024. D4U Semiconductor.
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