| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Panasonic Semiconductor |
2SC5036 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink |
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Panasonic Semiconductor |
Optoisolators High collector to emitter breakdown voltage : VCEO > 300 V, A type : VCEO > 350 V High current transfer ratio with Darlington phototransistor output : CTR = 4000% (typ.) High I/O isolation voltage : VISO ≥ 5000 Vrms Small DIL package for saving mount |
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Panasonic Semiconductor |
Optoisolators High collector to emitter breakdown voltage : VCEO > 300 V, A type : VCEO > 350 V High current transfer ratio with Darlington phototransistor output : CTR = 4000% (typ.) High I/O isolation voltage : VISO ≥ 5000 Vrms Small DIL package for saving mount |
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Panasonic Semiconductor |
NPN Transistor 1.6±0.2 1.5±0.1 • Low noise figure NF 2.5±0.1 3˚ 4.0 –+00..2205 • High maximum unilateral power gain GUM • High transition frequency fT • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape p |
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Panasonic Semiconductor |
NPN TRANSISTOR |
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Panasonic Semiconductor |
NPN Transistor 2.5±0.1 3˚ 4.0 –+00..2205 • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC= |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Panasonic Semiconductor |
2SC5026 2.5±0.1 3˚ 4.0 –+00..2205 • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and |
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Panasonic Semiconductor |
NPN TRANSISTOR q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collecto |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7 –0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack packag |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Panasonic Semiconductor |
NPN Transistor 9.9±0.3 φ3.2±0.1 2.9±0.2 q High collector to emitter VCEO q High-speed switching q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 4.1±0.2 8.0±0.2 Solder Dip / s Absolute Maximum Ratings |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Desde 2024. D4U Semiconductor.
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