Panasonic Semiconductor C39 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SC3981	Panasonic Semiconductor	Silicon NPN Transistor q q q q 0.7 q 16.2±0.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat
2	2SC3973A	Panasonic Semiconductor	Silicon NPN Transistor q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratin
3	C3940A	Panasonic Semiconductor	2SC3940A 0.7±0.1 0.7±0.2 13.5±0.5 • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage 2SC3940 VCBO 30 V 0.45+ –00..1
4	2SC3934	Panasonic Semiconductor	Silicon NPN Transistor 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and 0.15+ –00..0150 1.25±0.10 2.1±0.1 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.65) (0.65) 1.3±0.1 / ■ Absolute
5	2SC3942	Panasonic Semiconductor	Silicon NPN Transistor 5.5±0.2 2.7±0.2 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open cir- φ 3.1±0.1 cuited) Cob • Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0
6	2SC3982	Panasonic Semiconductor	Silicon NPN Transistor q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 900 1000 900 1000 800 7 15 10 5 150 3.5 150 –55 to +150 Unit V 26.0±0.5
7	2SC3982A	Panasonic Semiconductor	Silicon NPN Transistor q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 900 1000 900 1000 800 7 15 10 5 150 3.5 150 –55 to +150 Unit V 26.0±0.5
8	C3944	Panasonic Semiconductor	2SC3944 • Excellent collector current IC characteristics of forward current φ 3.1±0.1 transfer ratio hFE • High transition frequency fT • A complementary pair with 2SA1535 and 2SA1535A, is optimum for the driver stage of a 60 W to 100 W output amplifier /
9	C3973	Panasonic Semiconductor	2SC3973 q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratin
10	C3979	Panasonic Semiconductor	2SC3979 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which ca
11	2SC3937	Panasonic Semiconductor	Silicon NPN Transistor 3 • Low noise figure NF 1.25±0.10 2.1±0.1 5˚ • High forward transfer gain S21e2 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment 1 2 and automatic insertion through the tape packing and the magazine p
12	2SC3940	Panasonic Semiconductor	Silicon NPN Transistor 0.7±0.1 0.7±0.2 13.5±0.5 • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage 2SC3940 VCBO 30 V 0.45+ –00..1
13	2SC3970A	Panasonic Semiconductor	Silicon NPN Transistor q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratin
14	2SC3972	Panasonic Semiconductor	Silicon NPN Transistor q High-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.1±0.1 q Satisfactory linearity of foward current transfer ratio hFE q Full-
15	2SC3981A	Panasonic Semiconductor	Silicon NPN Transistor q q q q 0.7 q 16.2±0.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat
16	2SC3904	Panasonic Semiconductor	Silicon NPN Transistor q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temper
17	2SC3929A	Panasonic Semiconductor	Silicon NPN Transistor  Package  Low noise voltage NV  Code  High forward current transfer ratio hFE  S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. SMini3-G1  Pin Name 1. Base /  Absolute Maximum Ra
18	2SC3930	Panasonic Semiconductor	Silicon NPN Transistor • Optimum for RF amplification of FM/AM radios 0.2±0.1 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing / ■ Absolute Maximum Ratings Ta = 25°C 1 2 (0.65)
19	2SC3932	Panasonic Semiconductor	Silicon NPN Transistor 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment 1.25±0.10 2.1±0.1 5˚ and automatic insertion through the tape packing 1 2 0.2±0.1 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.
20	2SC3935	Panasonic Semiconductor	Silicon NPN Transistor • High transition frequency fT 3 • Small collector output capacitance (Common base, input open cir- 0.15+ –00..0150 1.25±0.10 2.1±0.1 5˚ cuited) Cob and reverse transfer capacitance (Common base) Crb • S-Mini type package, allowing downsizing of