Panasonic Semiconductor C13 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C1384	Panasonic Semiconductor	Silicon NPN Transistor  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0684 TO-92L-A1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 60 V  Pin N
2	C1318	Panasonic Semiconductor	Silicon NPN Transistor • Low collector to emitter saturation voltage VCE(sat) • Complementary pair with 2SA719 and 2SA720 5.0±0.2 0.7±0.1 5.1±0.2 Unit: mm 4.0±0.2 0.7±0.2 13.5±0.5 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to 2SC1
3	2SC1317	Panasonic Semiconductor	Silicon NPN Transistor  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0719 TO-92B-B1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V  Pin N
4	C1360	Panasonic Semiconductor	2SC1360 8.6±0.2 • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7 –+00..23 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open)
5	2SC1318	Panasonic Semiconductor	Silicon NPN Transistor  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0720 TO-92B-B1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 60 V  Pin N
6	C1360A	Panasonic Semiconductor	2SC1360A 8.6±0.2 • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7 –+00..23 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open)
7	LN2162C13	Panasonic Semiconductor	Surface Mounting Chip LED reen Green Red 10 5 3 Red 100 50 30 Red.Green 1 0.5 0.3 Green 0.1 1 3 5 10 30 50 100 300 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 1.5 ± 0.2 60 1: Anode 2: Cathode 0.8Max 80 (2.7) 100 IF (mA) Forward Current VF (V) Forward Vo
8	2SC1318A	Panasonic Semiconductor	Silicon NPN Transistor • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector
9	2SC1359	Panasonic Semiconductor	Silicon NPN Transistor • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 30 V c type Collecto
10	2SC1360	Panasonic Semiconductor	Silicon NPN Transistor 8.6±0.2 • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7 –+00..23 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open)
11	2SC1360A	Panasonic Semiconductor	Silicon NPN Transistor 8.6±0.2 • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7 –+00..23 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open)