Panasonic Semiconductor B97 Hoja de datos

No.	parte #	Fabricante	Descripción
1	B976	Panasonic Semiconductor	2SB976 q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VE
2	2SB976	Panasonic Semiconductor	PNP Transistor q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VE
3	2SB977A	Panasonic Semiconductor	PNP Epitaxial Silicon Transistor
4	2SB976	Panasonic Semiconductor	Power Transistors • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base
5	2SB970	Panasonic Semiconductor	PNP Transistor q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 1.9±0.2 0.95 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
6	2SB977	Panasonic Semiconductor	PNP Epitaxial Silicon Transistor