| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
2SB950 q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s A |
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Panasonic Semiconductor |
2SB950A q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s A |
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Panasonic Semiconductor |
2SB951A q q q 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –7 –12 –8 45 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3 |
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Panasonic Semiconductor |
PNP Transistor q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0 –0.2 +0.1 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
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Panasonic Semiconductor |
Power Transistors • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter |
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Panasonic Semiconductor |
PNP Transistor q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s A |
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Panasonic Semiconductor |
PNP Transistor q q q 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –7 –12 –8 45 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3 |
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Panasonic Semiconductor |
PNP Transistor q q q 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –7 –12 –8 45 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3 |
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Panasonic Semiconductor |
PNP Transistor q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –40 –50 –20 –40 –5 –12 |
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Panasonic Semiconductor |
PNP Transistor q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –40 –50 –20 –40 –5 –12 |
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Panasonic Semiconductor |
PNP Transistor q q q Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 |
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Panasonic Semiconductor |
PNP Transistor q q q Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 |
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Panasonic Semiconductor |
Power Transistors • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Parameter Collector-base voltage (Emitter ope |
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Panasonic Semiconductor |
Power Transistors • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Parameter Collector-base voltage (Emitter ope |
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Panasonic Semiconductor |
Power Transistors • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 14.0±0.5 |
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Panasonic Semiconductor |
Power Transistors • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 14.0±0.5 |
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Panasonic Semiconductor |
Power Transistors • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.2 3.4±0.3 1.0 |
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Panasonic Semiconductor |
Power Transistors • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.2 3.4±0.3 1.0 |
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Panasonic Semiconductor |
Power Transistors • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter |
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Desde 2024. D4U Semiconductor.
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