| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
2SB788 q High collector to emitter voltage VCEO. q Low noise voltage NV. q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperat |
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Panasonic Semiconductor |
Silicon PNP Transistor q q 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB789 2SB789A 2SB789 VCBO VCEO VEBO ICP IC PC* Tj Tstg Symbol (Ta=25˚C) 1.0 –0.2 +0.1 Ratings –100 –120 –100 –120 –5 –1 |
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Panasonic Semiconductor |
Silicon PNP Transistor q q 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB789 2SB789A 2SB789 VCBO VCEO VEBO ICP IC PC* Tj Tstg Symbol (Ta=25˚C) 1.0 –0.2 +0.1 Ratings –100 –120 –100 –120 –5 –1 |
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Desde 2024. D4U Semiconductor.
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