Panasonic Semiconductor B14 Hoja de datos

No.	parte #	Fabricante	Descripción
1	B1434	Panasonic Semiconductor	2SB1434 • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to base voltage Collector to emitte
2	B1462L	Panasonic Semiconductor	Silicon PNP Transistor • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector to ba
3	B1417	Panasonic Semiconductor	2SB1417 q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High fo
4	2SB1417	Panasonic Semiconductor	Silicon PNP epitaxial planar type Transistor q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High fo
5	2SB1418A	Panasonic Semiconductor	Silicon PNP epitaxial planar type Darlington q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s
6	2SB1434	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to base voltage Collector to emitte
7	2SB1438	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q q Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter
8	2SB1490	Panasonic Semiconductor	Silicon PNP Transistor q q q Optimum for 80W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Para
9	2SB1492	Panasonic Semiconductor	Silicon PNP Transistor q q q Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings
10	2SB1470	Panasonic Semiconductor	Silicon PNP Transistor • Optimum for 120 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3 ■ A
11	2SB1435	Panasonic Semiconductor	Silicon PNP epitaxial planar type Transistor • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute
12	2SB1446	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collec
13	2SB1462	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 s Ab
14	2SB1463	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q q 0.4 0.8±0.1 0.4 High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –150 –150
15	2SB1488	Panasonic Semiconductor	Silicon PNP triple diffusion planer type Transistor q q q q High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. (Ta=25˚C) Ratings –400 –400 –7 –1 – 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 0.65 max. 1.0 1.0 0
16	2SB1462L	Panasonic Semiconductor	Silicon PNP Transistor • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector to ba
17	2SB1417A	Panasonic Semiconductor	Silicon PNP epitaxial planar type Transistor q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High fo
18	2SB1418	Panasonic Semiconductor	Silicon PNP epitaxial planar type Darlington q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s
19	2SB1440	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0 –