Panasonic Semiconductor A17 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SA1748	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q q 0.425 1.25±0.1 0.425 High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.
2	2SA1762	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q 1.5 R0.9 R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.4 1.0±0.1 R 0. 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitte
3	2SA1738	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 2 1.1 –0.1 +0.2 (Ta=25˚C) Ratings –15 –15 –4 –100 –50 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C Parameter Collector to base voltage Collector to emitter voltage Emitter to base volta
4	2SA1767	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 mA mW ˚C ˚C 1 2 3 2.3±0.2 mA 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO –92 EIAJ:SC –43A s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current
5	2SA1790	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q 0.4 0.8±0.1 0.4 0.2 –0.05 0.15 –0.05 +0.1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2
6	2SA1791	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q q 0.4 0.8±0.1 0.4 0.2 –0.05 0.15 –0.05 +0.1 High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packi
7	A1748	Panasonic Semiconductor	2SA1748 q q q 0.425 1.25±0.1 0.425 High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.
8	2SA1739	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q q 0.425 1.25±0.1 0.425 High-speed switch (pair with 2SC3938) Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine pac
9	2SA1767	Panasonic Semiconductor	Silicon NPN triple diffusion planer type Transistor 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 mA mW ˚C ˚C 1 2 3 2.3±0.2 mA 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO –92 EIAJ:SC –43A s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current