| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
2SA1309A q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ra |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ra |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ra |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q q Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. (Ta=25˚C) Ratings –60 –55 –7 –200 –100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collecto |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ra |
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Panasonic Semiconductor |
On/off logic IC • 8 accurate Schmitt trigger inputs with clamp circuits • Very low quiescent current • Reset generator circuit • Changed information output • On/off output to control a regulator IC which supplies the microcontroller • 32.768 kHz RC oscillator and/or |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor q q q q Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. (Ta=25˚C) Ratings –60 –55 –7 –200 –100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collecto |
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Panasonic Semiconductor |
Photo Interrupter Ultraminiature : 3.8 × 4.2 mm (height : 4.2 mm) Highly precise position detection : 0.15 mm Gap width : 1.4 mm Support for thin equipment (permits direct mounting on printed circuit board Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratin |
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Panasonic Semiconductor |
Photo Interrupter Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm) Fast response : tr, tf = 35 µs (typ.) Highly precise position detection : 0.15 mm Gap width : 1.2 mm Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Input (Light emitting diode) O |
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Panasonic Semiconductor |
Photo Interrupter Ultraminiature : 2.6 × 4.0 mm (height : 3.3 mm) Highly precise position detection : 0.05 mm Gap width : 1.0 mm Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Input (Light emitting diode) Output (Photo transistor) Temperature |
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Panasonic Semiconductor |
Transmissive Photosensors Ultraminiature : 2.6 × 4.9 mm (height : 3.3 mm) Highly precise position detection : 0.1 mm Gap width : 2.0 mm Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Input (Light emitting diode) Output (Photo transistor) Temperature R |
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Desde 2024. D4U Semiconductor.
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