| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic |
Fast Recovery Diodes High switching speed trr Soft recovery Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Forward current TC = 25°C Non-repetitive peak forward surge cur |
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Panasonic |
Fast Recovery Diodes Super high speed switching characteristic (trr = 15 ns typ.) Soft recovery Package Code TO-220D-A1 Pin Name 1: Anode 2: Cathode 3: Anode Non-repetitive peak reverse surge voltage *1 Forward current (Average) *2 Repetitive peak forward c |
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Panasonic |
Fast Recovery Diode φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage • Easy-to-mount, caused by its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 13.7±0.2 4.2±0.2 Solder Di |
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Panasonic Semiconductor |
Silicon planar type • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V 1 2 (0.65) Unit : mm 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90 |
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Panasonic |
Fast Recovery Diode φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage • Easy-to-mount, caused by its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Absolute Maximum Ratin |
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Panasonic |
Schottky Barrier Diode / • Forward current (Average) IF(AV) = 10 A rectification is possible . • Cathode-common dual type e ge • Low forward voltage: VF < 0.47 V 15.0±0.5 13.7±0.2 4.2±0.2 Solder Dip nc d ycle sta ■ Absolute Maximum Ratings TC = 25°C lifec Parameter Sy |
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Panasonic |
Silicon planer type 1 3 1.45 2 +0.2 1.1 –0.1 Parameter Average forward current Instanious forward current Total power dissipation Non-repetitive reverse surge power dissipation Junction temperature Storage temperature Working value in a single piece *2 With a prin |
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Panasonic |
Fast Recovery Diode • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end 15.0 ± 0.5 φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 1.4 ± 0.2 1.6 ± |
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Panasonic |
Fast Recovery Diode φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • Fast reverse recovery time trr +0 −0.4 • TO-220D (Full-pack package) with high dielectric breakdown voltage • Easy-to-mount, caused by its V cut lead end 1.5 1.4±0.2 2.6±0.1 0.8±0.1 0.55±0.15 |
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Panasonic |
Fast Recovery Diode • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 1.5 − 0.4 +0 3.0 ± 0.5 2 |
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Panasonic |
Fast Recovery Diode • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown votlage > 5.0 kV • Easy-to-mount, caused by its V cut lead end φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 1.4 ± 0.2 1.6 ± 0.2 0.8 ± 0 |
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Panasonic |
Fast Recovery Diode • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 1.4 ± 0.2 1.6 ± 0.2 0.8 ± 0 |
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Panasonic |
Schottky Barrier Diode φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • High dielectric breakdown voltage: > 5 kV • Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Un |
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Panasonic |
Schottky Barrier Diode φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • High dielectric breakdown voltage: > 5 kV • Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Un |
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Panasonic |
Silicon epitaxial planar type variable resistor • Mini type package • Extremely small reverse current IR • High reliability with planar structure • Wide forward voltage VF range 0.65 ± 0.15 1.5 − 0.05 + 0.25 0.95 2.9 − 0.05 1.9 ± 0.2 + 0.2 1 3 2 0.95 1.45 1.1 − 0.1 Parameter Reverse vo |
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Panasonic |
Silicon epitaxial planar type • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.65 ± 0.15 1.5 + 0.25 − 0.05 0.95 2.9 − 0.05 1.9 ± 0 |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Small terminal capacitance, Ct • Two diodes are connected in series in the package 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Peak reve |
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Panasonic |
Silicon epitaxial planer type variable resistor q S-Mini Cathode Anode Unit : mm 0.625 type package enabling high-density mounting small reverse current IR 0.5±0.1 1 q Large q Wide power dissipation PD forward voltage V F range 2 0.16 –0.06 +0.1 0.3 0.4±0.1 1.7±0.1 2.5±0.2 0.4±0.1 q Extr |
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Panasonic |
Silicon epitaxial planer type variable resistor q S-Mini Cathode Anode Unit : mm 0.625 type package enabling high-density mounting small reverse current IR 0.5±0.1 1 q Large q Wide power dissipation PD forward voltage V F range 2 0.16 –0.06 +0.1 0.3 0.4±0.1 1.7±0.1 2.5±0.2 0.4±0.1 q Extr |
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Panasonic |
Silicon planer type 2.9 –0.05 Unit : mm 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 0.5R 0.95 4 1 q Mini type package (4-pin) wiring in parallel of MA3056 1.9±0.2 +0.2 0.95 0.5 0.4 –0.05 +0.1 q Two-element 2 3 0.2 Double Single Double Single Dou |
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Desde 2024. D4U Semiconductor.
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