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Panasonic |
2SC5909 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings |
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Panasonic Semiconductor |
NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings TC = 25°C |
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Panasonic |
Silicon NPN Transistor φ 3.2±0.1 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with one screw. 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Abs |
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Panasonic Semiconductor |
NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings |
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Panasonic Semiconductor |
2SC5931 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ I Absolute Maximum Ratings |
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Panasonic |
2SC5914 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area ■ Absolute Maximum Ratings TC = 25°C Parameter Symbo |
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Panasonic Semiconductor |
2SC5902 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings TC = 25°C |
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Panasonic Semiconductor |
2SC5904 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf < 200 nsec) • Wide safe operation area ■ Absolute Maximum Ratings TC = 25°C / P |
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Panasonic |
Silicon NPN Transistor • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed to the heat sink with one screw. 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Absolute Maximum Ratings TC = 25°C 13.7±0.2 |
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Panasonic Semiconductor |
NPN Transistor 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf < 200 nsec) • Wide safe operation area ■ Absolute Maximum Ratings TC = 25°C / P |
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Panasonic Semiconductor |
NPN TRANSISTOR • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base volt |
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Panasonic Semiconductor |
Silicon NPN Transistor • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed to the heat sink with one screw. 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Absolute Maximum Ratings TC = 25°C 13.7±0.2 |
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Panasonic |
Silicon NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area ■ Absolute Maximum Ratings TC = 25°C Parameter Symbo |
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Panasonic Semiconductor |
2SC5905 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings |
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Panasonic Semiconductor |
NPN Transistor 3 0.15 min. 0.80±0.05 1.20±0.05 • High transition frequency fT • SSS-Mini type package, allowing downsizing of the equipment 5˚ 0.15 min. and automatic insertion through the tape packing. ■ Absolute Maximum Ratings Ta = 25°C 0.23+ –00..0025 1 |
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Panasonic Semiconductor |
Silicon NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings |
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Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base volt |
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Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Transistor • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw. 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4. |
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Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Transistor • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 10.0±0.2 1.0±0.2 90˚ 2.5±0.1 5.0±0.1 13.0±0.2 1.2±0.1 1.48±0.2 C 1.0 2.25±0 |
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Panasonic Semiconductor |
Silicon NPN Transistor φ 3.2±0.1 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with one screw. 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Abs |
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Desde 2024. D4U Semiconductor.
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