| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Panasonic |
2SC5885 9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1 • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area φ3.2±0.1 • Built-in dumper diode I Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2 |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor 9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1 • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area φ3.2±0.1 • Built-in dumper diode ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2 |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guarantee |
|
|
|
|
Panasonic |
Silicon NPN Transistor • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and 0.40+ –00..0150 3 0.16+ –00..0160 0.4±0.2 1.50 –+00..0255 2.8 –+00..32 automatic insertion through the tape packing 1 2 (0.95) (0.95 |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor 3 2 0.60±0.05 High forward current transfer ratio hFE Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package 1 1.00±0.05 0.39+−00..0013 0.15±0.05 0.05±0.03 0.35±0.01 Package: 0.6 mm × 1.0 m |
|
|
|
|
Panasonic |
Silicon NPN Transistor 0.33+ –00..0025 3 0.10+ –00..0025 0.15 min. 0.80±0.05 1.20±0.05 • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the 5˚ 0.15 min. equipment and automatic insertion through the tape packing ■ |
|
|
|
|
Panasonic |
Silicon NPN Transistor 0.33+ –00..0025 3 0.10+ –00..0025 0.15 min. 0.80±0.05 1.20±0.05 • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the 5˚ 0.15 min. equipment and automatic insertion through the tape packing ■ |
|
|
|
|
Panasonic |
Silicon NPN Transistor • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and au- 0.40+ –00..0150 3 0.16+ –00..0160 0.4±0.2 1.50 –+00..0255 2.8 –+00..32 tomatic insertion through the tape packing and the magazine pack- ing |
|
|
|
|
Panasonic Semiconductor |
NPN TRANSISTOR • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guarantee |
|
|
|
|
Panasonic |
Silicon NPN Transistor ■ Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the • Code SSSMini3-F2 equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C / Parameter |
|
|
|
|
Panasonic |
Silicon NPN Transistor 3 2 0.60±0.05 High forward current transfer ratio hFE Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package 1 1.00±0.05 0.39+−00..0013 0.15±0.05 0.05±0.03 0.35±0.01 Package: 0.6 mm × 1.0 m |
|
|
|
|
Panasonic Semiconductor |
NPN Transistor • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and au- 0.40+ –00..0150 3 0.16+ –00..0160 0.4±0.2 1.50 –+00..0255 2.8 –+00..32 tomatic insertion through the tape packing and the magazine pack- ing |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor • High-speed switching (Fall time tf is short) • High collector-base voltage (Emitter open) VCBO • Low collector-emitter saturation voltage VCE(sat) • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0. |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor 5˚ • High collector-emitter voltage (Base open) VCEO 1 2 (0.65) • High transition frequency fT (0.95) (0.95) 1.9±0.1 2.90+ –00..0250 / ■ Absolute Maximum Ratings Ta = 25°C 10˚ Parameter Symbol Rating Unit e ) Collector-base voltage (Emitt |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) www.DataSheet4U.com Unit: mm 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.2 |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor • High transition frequency fT • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) www.DataSheet4U.com Unit: mm 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.1 |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guarantee |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistors • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guarantee |
|
|
|
|
Panasonic |
Silicon NPN Transistor 5˚ • High collector-emitter voltage (Base open) VCEO 1 2 (0.65) • High transition frequency fT (0.95) (0.95) 1.9±0.1 2.90+ –00..0250 / ■ Absolute Maximum Ratings Ta = 25°C 10˚ Parameter Symbol Rating Unit e ) Collector-base voltage (Emitt |
|
|
|
|
Panasonic Semiconductor |
NPN Transistor 9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1 • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area φ3.2±0.1 • Built-in dumper diode ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2 |
|
Desde 2024. D4U Semiconductor.
|