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Panasonic |
Silicon NPN Transistor • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV / guaran |
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Panasonic Semiconductor |
NPN Transistor • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV / guaran |
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Panasonic |
NPN Transistor • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base volta |
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Panasonic Semiconductor |
NPN TRANSISTOR • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guarantee |
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Panasonic Semiconductor |
NPN Transistor 1.2±0.1 • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector to emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity / • Allowing automatic insertion with radial taping 18.0±0.5 |
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Desde 2024. D4U Semiconductor.
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