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Panasonic |
2SC5521 contribute to higher performing, more reliable home-use TVs that cost less. s Features www.DataSheet4U.com q Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V q Low loss:VCE(sat)<3V q Broad area of safe-operation. s Spacifications Param |
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Panasonic |
2SC5584 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 26.0±0.5 (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.3 ■ Absolute Ma |
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Panasonic |
Silicon NPN Transistor • High transition frequency fT 5˚ • High gain of 8.2 dB and low noise of 1.8 dB at 3 V 0.23+ –00..0025 12 0.15 min. • Optimum for RF amplification of a portable telephone and pager (0.40) (0.40) 0.80±0.05 1.20±0.05 I Absolute Maximum Ratings |
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Panasonic |
Silicon NPN Transistor • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ / 1.1±0.1 0.7±0.1 I Absolute Maximum Ratings TC = 25°C 5.45±0.3 |
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Panasonic Semiconductor |
2SC5552 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 5˚ (4.0) 5˚ 2 |
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Panasonic |
2SC5516 φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Panasonic Semiconductor |
2SC5591 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle • High-speed switching: Fall time tf < 0.2 µs • Low collector-emitter |
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Panasonic |
2SC5505 • High-speed switching φ 3.2±0.1 15.0±0.5 • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed ■ Absolute Maximum Ratings TC = 25°C 1.4±0.2 1.6±0.2 2.6±0.1 / Parameter Symbol Rating Unit 0.8±0.1 0.55±0.15 e Colle |
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Panasonic |
Silicon NPN Transistor • Low noise figure NF 0.40+ –00..0150 3 0.16+ –00..0160 1.50 –+00..0255 2.8 –+00..32 • High transition frequency fT 0.4±0.2 • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine |
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Panasonic |
Silicon NPN epitaxial planar type Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: E3 Unit: mm Packaging DSC5501×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (sta |
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Panasonic Semiconductor |
NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 5˚ (4.0) 5˚ 2 |
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Panasonic Semiconductor |
NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 5˚ (4.0) 5˚ 2 |
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Panasonic |
Horizontal Deflection Output Transistor |
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Panasonic Semiconductor |
2SC5583 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 26.0±0.5 (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.3 I Ab |
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Panasonic Semiconductor |
Silicon NPN Transistor • Low noise figure NF 0.40+ –00..0150 3 0.16+ –00..0160 1.50 –+00..0255 2.8 –+00..32 • High transition frequency fT 0.4±0.2 • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine |
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Panasonic |
Silicon NPN Transistor • High transition frequency fT 5˚ • High gain of 8.2 dB and low noise of 1.8 dB at 3 V 0.23+ –00..0025 12 0.15 min. • Optimum for RF amplification of a portable telephone and pager (0.40) (0.40) 0.80±0.05 1.20±0.05 I Absolute Maximum Ratings |
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Panasonic |
Silicon NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 5˚ (4.0) 5˚ 2 |
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Panasonic |
Silicon NPN Transistor 1.50 –+00..0255 2.8 –+00..32 • Low collector-emitter saturation voltage VCE(sat) 0.4±0.2 • High-speed switching • Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing (0.95) (0.95) 5˚ ( |
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Panasonic Semiconductor |
NPN TRANSISTOR φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Panasonic Semiconductor |
NPN TRANSISTOR φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Desde 2024. D4U Semiconductor.
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