| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic |
Silicon NPN Transistor 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink wit |
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Panasonic |
2SC3507 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with |
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Panasonic Semiconductor |
2SC3527 |
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Panasonic Semiconductor |
Silicon NPN Transistor 8.6±0.2 • High transition frequency fT • Small collector output capacitance (Common base, input open cir- 13.5±0.5 0.7 –+00..23 cuited) Cob • Wide current range 0.7±0.1 / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe |
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Panasonic Semiconductor |
Silicon NPN Transistor 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink wit |
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Panasonic Semiconductor |
Silicon NPN Transistor 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with |
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Panasonic Semiconductor |
Silicon NPN Transistor 0.45 –0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter satu |
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Desde 2024. D4U Semiconductor.
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