Panasonic C31 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SC3130	Panasonic Semiconductor	Silicon NPN Transistor • High transition frequency fT • Small collector output capacitance (Common base, input open cir- 0.40+ –00..0150 3 0.16+ –00..0160 0.4±0.2 1.50 –+00..0255 2.8 –+00..32 cuited) Cob and reverse transfer capacitance (Common emitter) Crb • Mini type pa
2	C3130	Panasonic	Silicon NPN Transistor • High transition frequency fT • Small collector output capacitance (Common base, input open cir- 0.40+ –00..0150 3 0.16+ –00..0160 0.4±0.2 1.50 –+00..0255 2.8 –+00..32 cuited) Cob and reverse transfer capacitance (Common emitter) Crb • Mini type pa
3	C3187	Panasonic	Silicon NPN Transistor 5.1±0.2 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open cir- cuited) Cob 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e Collecto
4	DRC3114E	PANASONIC	Silicon NPN epitaxial planar type  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm  Marking Symbol: NB  Packaging DRC3114E0L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (s
5	2SC3187	Panasonic Semiconductor	Silicon NPN Transistor 5.1±0.2 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open cir- cuited) Cob 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e Collecto