Panasonic C13 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C1384	Panasonic Semiconductor	Silicon NPN Transistor  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0684 TO-92L-A1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 60 V  Pin N
2	C1317	Panasonic	Silicon NPN Transistor • Low collector to emitter saturation voltage VCE(sat) • Complementary pair with 2SA719 and 2SA720 5.0±0.2 0.7±0.1 5.1±0.2 Unit: mm 4.0±0.2 0.7±0.2 13.5±0.5 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to 2SC1
3	C1318	Panasonic Semiconductor	Silicon NPN Transistor • Low collector to emitter saturation voltage VCE(sat) • Complementary pair with 2SA719 and 2SA720 5.0±0.2 0.7±0.1 5.1±0.2 Unit: mm 4.0±0.2 0.7±0.2 13.5±0.5 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to 2SC1
4	C1359	Panasonic	Silicon NPN Transistor • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 30 V c type Collecto
5	2SC1317	Panasonic Semiconductor	Silicon NPN Transistor  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0719 TO-92B-B1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V  Pin N
6	C1398	Panasonic	Silicon NPN Transistor eristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as t
7	C1360	Panasonic Semiconductor	2SC1360 8.6±0.2 • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7 –+00..23 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open)
8	C1383	Panasonic	2SC1383  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0683 TO-92L-A1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V  Pin N
9	2SC1384	Panasonic	Silicon NPN Transistor  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0684 TO-92L-A1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 60 V  Pin N
10	C1318A	Panasonic	Silicon NPN Transistor • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector
11	2SC1318	Panasonic Semiconductor	Silicon NPN Transistor  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0720 TO-92B-B1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 60 V  Pin N
12	C1398A	Panasonic	Silicon NPN Transistor eristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as t
13	C1360A	Panasonic Semiconductor	2SC1360A 8.6±0.2 • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7 –+00..23 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open)
14	LN2162C13	Panasonic Semiconductor	Surface Mounting Chip LED reen Green Red 10 5 3 Red 100 50 30 Red.Green 1 0.5 0.3 Green 0.1 1 3 5 10 30 50 100 300 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 1.5 ± 0.2 60 1: Anode 2: Cathode 0.8Max 80 (2.7) 100 IF (mA) Forward Current VF (V) Forward Vo
15	2SC1318A	Panasonic Semiconductor	Silicon NPN Transistor • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector
16	2SC1359	Panasonic Semiconductor	Silicon NPN Transistor • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 30 V c type Collecto
17	2SC1383	Panasonic	Silicon NPN Transistor  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0683 TO-92L-A1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V  Pin N
18	2SC1360	Panasonic Semiconductor	Silicon NPN Transistor 8.6±0.2 • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7 –+00..23 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open)
19	2SC1360A	Panasonic Semiconductor	Silicon NPN Transistor 8.6±0.2 • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7 –+00..23 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open)
20	LN2162C13TR	Panasonic	Surface Mounting Chip LED