No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic |
2SA684 • Complementary pair with 2SC1383 and 2SC1384 • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −5 |
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Panasonic Semiconductor |
2SA1512 q Low collector to emitter saturation voltage VCE(sat). q Optimum for low-voltage operation and for converters. q Allowing supply with the radial taping. q Optimum for high-density mounting. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector |
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Panasonic Semiconductor |
Silicon NPN Transistor • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to b |
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Panasonic Semiconductor |
PNP Transistor |
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Panasonic Semiconductor |
Silicon PNP Transistor |
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Panasonic Semiconductor |
Silicon PNP Transistor • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 −1 −1.5 1 150 −55 to +150 V A A W °C °C V |
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Panasonic Semiconductor |
Silicon PNP Transistor 11.0±0.5 1 2SA0886 PC Ta 1.6 –4.0 –3.5 IC VCE TC=25˚C IB= –40mA –35mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC/IB=10 –10 Collector power dissipation PC (W) Collector current IC (A) 1.2 –3.0 –2.5 –30mA –25mA –20 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-dri |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. |
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Panasonic Semiconductor |
Spindle motor driver • 3-phase full-wave 120° duty factor system • Low power consumption due to a direct PWM system • D-MOS transistor with low ON resistance (0.6 Ω typ.) on the output stage • With start and stop pins • Thermal shut-down function built-in • With FG outpu |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guarantee |
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Panasonic |
Silicon PNP Transistor • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ Absolute Maximum Ratings |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage |
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Panasonic Semiconductor |
Silicon PNP Transistor q Complementary pair with 2SC1317 and 2SC1318. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA719 2SA720 2SA719 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1 –500 625 150 –55 ~ +150 |
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Panasonic Semiconductor |
Silicon PNP Transistor q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VE |
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Panasonic Semiconductor |
Silicon NPN Transistor 0.45 –0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitte |
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Panasonic Semiconductor |
Silicon NPN triple diffusion planer type Transistor 0.45 –0.1 1.27 +0.2 ˚C ˚C s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector ou |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor q q q 2.9 –0.05 Parameter Collector to base voltage Collector to 2SA1034 2SA1035 2SA1034 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –35 –55 –35 –55 –5 –100 –50 200 150 –55 ~ +150 Unit 1.1 –0.1 +0.2 2 emitter voltage 2SA1035 Emitter to bas |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q 4.0 Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amp |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q 0.4 0.8±0.1 0.4 0.2 –0.05 0.15 –0.05 +0.1 High-speed switching. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine |
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