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Pan Jit International |
25V N-Channel MOSFET • RDS(ON),VGS@10V,I DS@30A=4mΩ • RDS(ON),[email protected],I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Vol |
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