Pan Jit International 2SB Hoja de datos

No.	parte #	Fabricante	Descripción	Hoja de Datos
1	2SB2907	Pan Jit International	PNP GENERAL PURPOSE SWITCHING TRANSISTOR  PNP epitaxial silicon, planar design  Collector-emitter voltage VCE = -60V  Collector current IC = -600mA  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) 11 TO-92 AMMO T
2	2SB1427W6	Pan Jit International	PNP Transistor  Silicon PNP epitaxial type  Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC