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PYRAMID |
ULTRA Low Power 128K x 8 CMOS Static RAM deidlleercewtsiorsintep(iCennsEa1Albo0lweto(aAWn1d6E.)CRrEee2mahdaigiinnhgs) HIGH. By presenting the address under these conditions, the data in the addressed memory location is presented on the data input/output pins. The input/output pins stay in t |
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PYRAMID |
high speed 256k x 16 (4 MEG) static cmos ram Fast Access Times - 10/12/15/20 ns Low Power Operation Single 3.3V ± 0.3V Power Supply 2.0V Data Retention Easy Memory Expansion Using CE and OE Inputs Fully TTL Compatible Inputs and Outputs P3C1041 high speed 256k X 16 (4 MEG) static c |
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PYRAMID |
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (Industrial) — 20/25/35 (Military) Low Power — 360 mW (max.) Single 3.3V ± 0.3V Power Supply DESCRIPTION The P3C1011 is a 131,072 words by 16 bits high-speed CMOS s |
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PYRAMID |
HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM 3.3V Power Supply High Speed (Equal Access and Cycle Times) — 12/15/20/25 ns (Commercial) — 15/20/25 ns (Industrial) Low Power Single 3.3 Volts ±0.3Volts Power Supply Easy Memory Expansion Using CE and OE Inputs DESCRIPTION The P3C1256 is a 262,144-b |
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PYRAMID |
STATIC CMOS RAM High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (Industrial) Low Power — 325 mW (max.) Single 3.3V ± 0.3V Power Supply Easy Memory Expansion Using CE and OE Inputs DESCRIPTION The P3C1021 is a 65,536 words by 16 |
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PYRAMID |
STATIC CMOS RAM VCC Current (Commercial/Industrial) — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Wide Range Power Supply: 2.7V to 3.6V Easy Memory Expansion Using CE and OE Inputs Common Data I/O P3C1256L LOW POWER 32K x 8 STATIC CMOS R |
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Desde 2024. D4U Semiconductor.
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