| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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PST |
HIGH POWER THYRISTOR : - Blocking Capability up to 1400 V - High dV/dt Capability - All Diffused Structure - Amplifying Gate Configuration - Rugged Ceramic Hermetic Package ELECTRICAL CHARACTERISTICS AND RATINGS Blocking Parameter Symbol Min Max Typ Unit Conditions R |
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PST |
HIGH POWER THYRISTOR : - Blocking Capability up to 2000 V - High dV/dt Capability - All Diffused Structure - Amplifying Gate Configuration - Rugged Ceramic Hermetic Package ELECTRICAL CHARACTERISTICS AND RATINGS Blocking Parameter Symbol Min Max Typ Unit Conditions R |
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PST |
HIGH POWER THYRISTOR : - Blocking Capability up to 1200 V - High dV/dt Capability - All Diffused Structure - Amplifying Gate Configuration - Rugged Ceramic Hermetic Package ELECTRICAL CHARACTERISTICS AND RATINGS Blocking Parameter Symbol Min Max Typ Unit Conditions R |
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PST |
HIGH POWER THYRISTOR . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Notes: All ratings are specif |
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PST |
HIGH POWER THYRISTOR . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1 |
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PST |
HIGH POWER THYRISTOR . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1 |
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PST |
HIGH POWER THYRISTOR . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 2600 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - O |
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Desde 2024. D4U Semiconductor.
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