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PINGWEI |
N-Channel MOSFET oltage BVDSS VGS=0V,ID=250uA 30 Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Reference to 25℃ ， － ID=250uA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V － Gate-Body Leakage Current,Forward IGSSF VGS=20V,VDS=0V － Gate-Body Leakage |
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Desde 2024. D4U Semiconductor.
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