logo

PAN JIT PJE DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
PJE8403

Pan Jit International
20V P-CHANNEL MOSFET

 RDS(ON) , [email protected], [email protected]<340mΩ
 RDS(ON) , [email protected], [email protected]<420mΩ
 RDS(ON) , [email protected], [email protected]<600mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected 2KV HBM
 Lead free in
Datasheet
2
PJESDA5V6-4G

Pan Jit International
QUAD ARRAY

• Low Leakage < 1A@VRWM
• Breakdown Voltage : 5.6Volt-6.7Volt@1mA
• ESD Protection Meeting IEC61000-4-2-Level 4
• In compliance with EU RoHS 2002/95/EC directives SOT-553 MECHANICAL DATA Case : SOT-553, Plastic Terminals : Solderable per MIL-STD-7
Datasheet
3
PJESDA5V6-5G

Pan Jit International
QUAD ARRAY

• Low Leakage < 1 A@VRWM
• Breakdown Voltage : 5.6Volt-6.7Volt@1mA
• ESD Protection Meeting IEC61000-4-2-Level 4
• In compliance with EU RoHS 2002/95/EC directives SOT-563 MECHANICAL DATA Case : SOT-563, Plastic Terminals : Solderable per MIL-STD-
Datasheet
4
PJE8407

Pan Jit International
20V P-CHANNEL MOSFET

 Low Voltage Drive (1.2V).
 Advanced Trench Process Technology
 Specially Designed for Load switch, PWM Application, etc.
 ESD Protected
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std. (
Datasheet
5
PJESD5V6LC-2W

Pan Jit International
Low capacitance TVS arrays

• ESD Passed devices : Air mode 15KV ,human body mode 8KV
• In compliance with EU RoHS 2002/95/EC directives 3~5 Volts POWER 30 Watts MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:
Datasheet
6
PJESD5V6LC-4

Pan Jit International
Low capacitance TVS arrays

• Based on the electrostatic discharge immunity test (IEC61000-4-2), the product assures the minmum endurance of 8kV.
• Capacitance is small with 10pF (at V R =0V,f=1MHz) between the terminal. It is excellent in the frequency characteristic.
• With 4
Datasheet
7
PJESD6V2LC-4

Pan Jit International
Low capacitance TVS arrays

• Based on the electrostatic discharge immunity test (IEC61000-4-2), the product assures the minmum endurance of 8kV.
• Capacitance is small with 10pF (at V R =0V,f=1MHz) between the terminal. It is excellent in the frequency characteristic.
• With 4
Datasheet
8
PJESD6V8LC-4

Pan Jit International
Low capacitance TVS arrays

• Based on the electrostatic discharge immunity test (IEC61000-4-2), the product assures the minmum endurance of 8kV.
• Capacitance is small with 10pF (at V R =0V,f=1MHz) between the terminal. It is excellent in the frequency characteristic.
• With 4
Datasheet
9
PJESDA5V6-4LCG

Pan Jit International
LOW CAPACITANCE QUAD ARREY

• ESD Protection : IEC61000-4-2
• Four Separate Unidirectional Configurations for Protection
• Low Leakage Current < 1 µ A @ 3Volts
• Power Dissipation : 380mW
• Low Capacitance
• In compliance with EU RoHS 2002/95/EC directives SOT-553 MECHANICAL
Datasheet
10
PJESDA6V8-5LCG

Pan Jit International
LOW CAPACITANCE SOT-563 5-LINE TRANSIENT VOLTAGE SUPPRESSOR ARRAY

• ESD Protection : IEC61000-4-2 8KV Contact 15KV Discharge
• Five Separate Unidirectional Configuration for Protection
• Low Leakage Current PRELIMINARY
• Peak Power Dissipation of 20W@8/20 μs
• Low off-static Capacitance
• In compliance with EU Ro
Datasheet
11
PJESDZ6V8-2G

Pan Jit International
E.S.D. Dual Protection Diode Array
IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance Low Leakage Current, Maximum of 0.5µA at rated voltage Maximum Capacitance of 10pF per device at 0Vdc 1MHz Peak Power Dissipation of 20W 8/20µs Waveform Pin to pin compatible with standard SOT523 Lead
Datasheet
12
PJE5V0M1FN2

Pan Jit International
Low Capacitance TVS/ESD Protection

 Bidirectional ESD protection of one line
 IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance
 IEC61000-4-4(EFT): 20A(5/50nS)
 IEC61000-4-5(Lightning): 2A(8/20S)
 Low leakage current, maximum of 0.5A at rated voltage
 Lead free in complia
Datasheet
13
PJE5V0U8TB6

Pan Jit International
Low Capacitance ESD Protection

 IEC61000-4-2(ESD): ±17kV Air, ±12kV Contact Compliance
 IEC61000-4-4(EFT): 40A(5/50nS)
 IEC61000-4-5(Lightning): 5A(8/20S)
 Low leakage current, maximum 0.1A at rated voltage
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Gree
Datasheet
14
PJEC3V0V1WS

Pan Jit International
Very Low Capacitance TVS/ESD Protection

 Bidirectional ESD protection of one line
 IEC61000-4-2(ESD):±30kV Air,±30kV Contact Compliance
 IEC61000-4-4(EFT):40A(5/50nS)
 IEC61000-4-5(Lightning):15A(8/20uS)
 Very Low Capacitance:1.2 pF Maximum
 Protect one data, control or power line
Datasheet
15
PJEC5V0V6FN2

Pan Jit International
Very Low Capacitance TVS/ESD Protection

 Bidirectional ESD protection of one line
 IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance with the capability up to ±30kV
 IEC61000-4-4(EFT): 40A(5/50nS)
 IEC61000-4-5(Lightning): 3.5A(8/20S)
 Low leakage current, maximum of 0.1A at ra
Datasheet
16
PJEC5V0V6TS

Pan Jit International
Very Low Capacitance TVS/ESD Protection

 Bidirectional ESD protection of one line
 IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance with the capability up to ±30kV
 IEC61000-4-4(EFT): 40A(5/50nS)
 IEC61000-4-5(Lightning): 3.5A(8/20S)
 Low leakage current, maximum of 0.1A at ra
Datasheet
17
PJE138L

Pan Jit International
60V N-Channel Enhancement Mode MOSFET

 RDS(ON) , VGS@10V, ID@160mA<4.2Ω
 RDS(ON) , [email protected], ID@100mA<5Ω
 RDS(ON) , [email protected], ID@50mA<7Ω
 Advanced Trench Process Technology
 ESD Protected
 Specially Designed for Relay driver, Speed line drive, etc.
 Lead free in compliance with E
Datasheet
18
PJE8400

Pan Jit International
20V N-CHANNEL MOSFET

 RDS(ON) , [email protected], [email protected]<88mΩ
 RDS(ON) , [email protected], [email protected]<100mΩ
 RDS(ON) , [email protected], [email protected]<130mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 Lead free in compliance with EU RoHS 2011/6
Datasheet
19
PJE8401

Pan Jit International
20V P-CHANNEL MOSFET

 RDS(ON) , [email protected], [email protected]<130mΩ
 RDS(ON) , [email protected], [email protected]<160mΩ
 RDS(ON) , [email protected], [email protected]<210mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 Lead free in compliance with EU RoHS
Datasheet
20
PJE8404

Pan Jit International
30V N-Channel MOSFET

 RDS(ON) , VGS@4,5V, [email protected]<220mΩ
 RDS(ON) , [email protected], [email protected]<290mΩ
 RDS(ON) , [email protected], [email protected]<600mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected 2KV HBM
 Lead free in compl
Datasheet



logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad