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OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS ANODE (CASE) .209 .212 • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package .041 .015 .183 .186 .152 . |
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OptoDiode |
HI-REL GaAlAs IR EMITTERS GLASS .006 HIGH MAX .015 ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed TO-46 package • MIL-S-19500 screening available .041 .183 .152 .187 .156 .017 .098 .112 .100 • |
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OptoDiode |
HIGH-POWER GaAlAs IR EMITTER CHIPS OD-880-C .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output .014 • 880nm peak emission • Good bondability • Good ohmic contacts (gold alloys) EMITTING SURFACE www.DataSheet4U.com GOLD C |
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OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Medium emission angle for best coverage/power densit |
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OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Wide emission angle to cover a large area GLASS .00 |
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OptoDiode |
HIGH TEMPERATURE GaAlAs IR EMITTERS ANODE (CASE) OD-880WHT GLASS .006 HIGH MAX 1.00 MIN. .015 • Extended operating temperature range .209 .220 • No internal coatings • No derating or heat sink required to 80°C All surfaces are gold plated. Dimensions are nominal values in inches |
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OptoDiode |
HIGH-POWER GaAlAs EMITTER • High current capability • 2 bond pads for uniform output .024 • Gold contacts for high reliability bonding • High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless otherwise specified. EMITTING SURFACE .005 . |
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OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS EPOXY DOME .145 MAX .080 .017 .178 .195 ANODE (CASE) OD-880E • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission • High uniform output • TO-46 Header .100 .041 All dimensions are nominal in inches unless othe |
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OptoDiode |
HI-REL GaAlAs IR EMITTERS ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed TO-46 package • MIL-S-19500 screening available .041 .183 .152 .186 .156 .017 .024 .043 .100 • No internal coatings All |
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OptoDiode |
HI-REL GaAlAs IR EMITTERS .010 R. GLASS DOME .005 .010 .082 .088 ANODE .084 .092 .058 .062 OD-880PP • High reliability LPE GaAlAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed miniature pill package • MIL-S-19500 screening available .016 .024 .063 |
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OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS ANODE (CASE) .209 .220 • High current capability • 880nm peak emission for optimum matching with ODD-45W photodiode • Hermetically sealed TO-46 package • Narrow angle of emission .041 .183 .186 .152 .154 .017 .100 .030 .040 .197 .205 CATHODE |
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OptoDiode |
HIGH TEMPERATURE GaAlAs IR EMITTERS ANODE (CASE) OD-880LHT 1.00 MIN. GLASS DOME .015 • Extended operating temperature range .209 .220 • No internal coatings • No derating or heat sink required to 80°C All surfaces are gold plated. Dimensions are nominal values in inches unless oth |
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Desde 2024. D4U Semiconductor.
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