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OSRAM BPX DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
BPX87

OSRAM
Silicon NPN Phototransistor Arrays
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent 
Datasheet
2
BPX80

OSRAM
Silicon NPN Phototransistor Arrays
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent 
Datasheet
3
BPX81

OSRAM
Silicon NPN Phototransistor
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——One-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent  VCE
Datasheet
4
BPX65

OSRAM
Silicon PIN Photodiode
——Package: hermetically sealed ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Wavelength range (S10%) 350 nm to 1100 nm ——Short switching time (typ. 12 ns) ——Hermetically sealed metal can package (TO-18), suitable up to 125 °C Ordering
Datasheet
5
BPX82

OSRAM
Silicon NPN Phototransistor Arrays
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent 
Datasheet
6
BPX84

OSRAM
Silicon NPN Phototransistor Arrays
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent 
Datasheet
7
BPX83

OSRAM
Silicon NPN Phototransistor Arrays
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent 
Datasheet
8
BPX85

OSRAM
Silicon NPN Phototransistor Arrays
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent 
Datasheet
9
BPX86

OSRAM
Silicon NPN Phototransistor Arrays
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent 
Datasheet
10
BPX48

OSRAM
Silicon Differential Photodiode

• Especially suitable for applications from 400 nm to 1100 nm
• High photosensitivity
• DIL plastic package with high packing density
• Double diode with extremely high homogeneousness Applications
• Industrial electronics
• For control and drive c
Datasheet
11
BPX63

OSRAM
Silicon Photodiode

• Especially suitable for applications from 350 nm to 1100 nm
• Low reverse current (typ. 5 pA)
• TO-18, base plate, transparent epoxy resin lens Anwendungen
• Belichtungsmesser, Belichtungsautomaten Applications
• Exposure meters, automatic exposu
Datasheet
12
BPX38

OSRAM
Silicon NPN Phototransistor
——Package: hermetically sealed ——Spectral range of sensitivity: (typ) 450 ... 1120 nm ——Base connection ——Suitable up to 125 °C ——High linearity ——Available in groups Ordering Information  Type Photocurrent  VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm
Datasheet
13
BPX88

OSRAM
Silicon NPN Phototransistor Arrays
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent 
Datasheet
14
BPX61

OSRAM
Silicon NPN Phototransistor

• Suitable up to 125 °C
• Especially suitable for applications from 400 nm to 1100 nm
• Short switching time (typ. 20 ns)
• Hermetically sealed metal package (similar to TO-5) Applications
• Industrial electronics
• For control and drive circuits
Datasheet
15
BPX89

OSRAM
Silicon NPN Phototransistor Arrays
——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent 
Datasheet
16
BPX43

OSRAM
Silicon NPN Phototransistor
——Package: hermetically sealed ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Hermetically sealed metal can package (TO-18), suitable up to 125 °C ——Base connection ——High linearity
Datasheet



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