No. | parte # | Fabricante | Descripción | Hoja de Datos |
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OSRAM |
Silicon NPN Phototransistor Arrays ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent |
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OSRAM |
Silicon NPN Phototransistor Arrays ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent |
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OSRAM |
Silicon NPN Phototransistor ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——One-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent VCE |
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OSRAM |
Silicon PIN Photodiode ——Package: hermetically sealed ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Wavelength range (S10%) 350 nm to 1100 nm ——Short switching time (typ. 12 ns) ——Hermetically sealed metal can package (TO-18), suitable up to 125 °C Ordering |
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OSRAM |
Silicon NPN Phototransistor Arrays ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent |
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OSRAM |
Silicon NPN Phototransistor Arrays ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent |
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OSRAM |
Silicon NPN Phototransistor Arrays ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent |
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OSRAM |
Silicon NPN Phototransistor Arrays ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent |
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OSRAM |
Silicon NPN Phototransistor Arrays ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent |
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OSRAM |
Silicon Differential Photodiode • Especially suitable for applications from 400 nm to 1100 nm • High photosensitivity • DIL plastic package with high packing density • Double diode with extremely high homogeneousness Applications • Industrial electronics • For control and drive c |
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OSRAM |
Silicon Photodiode • Especially suitable for applications from 350 nm to 1100 nm • Low reverse current (typ. 5 pA) • TO-18, base plate, transparent epoxy resin lens Anwendungen • Belichtungsmesser, Belichtungsautomaten Applications • Exposure meters, automatic exposu |
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OSRAM |
Silicon NPN Phototransistor ——Package: hermetically sealed ——Spectral range of sensitivity: (typ) 450 ... 1120 nm ——Base connection ——Suitable up to 125 °C ——High linearity ——Available in groups Ordering Information Type Photocurrent VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm |
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OSRAM |
Silicon NPN Phototransistor Arrays ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent |
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OSRAM |
Silicon NPN Phototransistor • Suitable up to 125 °C • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • Hermetically sealed metal package (similar to TO-5) Applications • Industrial electronics • For control and drive circuits • |
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OSRAM |
Silicon NPN Phototransistor Arrays ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information Type Photocurrent |
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OSRAM |
Silicon NPN Phototransistor ——Package: hermetically sealed ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Hermetically sealed metal can package (TO-18), suitable up to 125 °C ——Base connection ——High linearity |
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