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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 100 Volt VDS * RDS(on)= 4Ω ZVN2110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 200 Volt VDS * RDS(on)= 10Ω ZVN2120A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operatin |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * VDS - 200V * RDS(ON) - 10Ω 7 ZVN2120G D PARTMARKING DETAIL - ZVN2120 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 350 Volt VDS RDS(on)=35Ω ZVN2535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106G D S COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP2106G ZVN2106 G D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissi |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 350 Volt VDS RDS(on)=35Ω ZVN2535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 100 Volt VDS * RDS(on)= 4Ω ZVN2110C G D S REFER TO ZVN2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Opera |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 200 Volt VDS * RDS(on)=10Ω ZVN2120C G D S REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Opera |
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ON Semiconductor |
Small Signal MOSFET • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Drain −Gate Voltage Gate −Source Voltage − Continuous − Non−repetitive (tp ≤ 50 μs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ |
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ON Semiconductor |
Small Signal MOSFET |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED ZVN2110G D S PARTMARKING DETAIL COMPLEMENTARY TYPE ZVN2110 ZVP2110G D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Sourc |
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ON Semiconductor |
Small Signal MOSFET • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Total Power Dissipation |
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Desde 2024. D4U Semiconductor.
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