No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Taiwan Semiconductor |
1500W TVS ● AEC-Q101 qualified ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Mois |
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Taiwan Semiconductor |
1500W TVS ● AEC-Q101 qualified ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Mois |
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General Semiconductor |
TVS ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Offers ESD protection in accordance with IEC1000-4-2 (IEC801-2) ♦ Monolithic TVS junctions 0.337(8.55) 0.344(8.75) 14 8 0.150(3.80) 0.157(4.00) 0.228(5.80) 0.244(6. |
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General Semiconductor |
TVS ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Offers ESD protection in accordance with IEC1000-4-2 (IEC801-2) ♦ Monolithic TVS junctions 0.337(8.55) 0.344(8.75) 14 8 0.150(3.80) 0.157(4.00) 0.228(5.80) 0.244(6. |
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Alpha & Omega Semiconductors |
TVS Diode • ESD protection for high-speed data lines: - IEC 61000 4-2, ESD immunity: - Air discharge: ±15 kV - Contact Discharge: ±15 kV - IEC 61000-4-5 (Lightning 8/20 µs): 5 A - IEC 61000-4-4 EFT (5/50 ns): 40 A - Human Body Mode: ±8 kV • Bidirectional TVS • |
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Alpha & Omega Semiconductors |
Dual Channel Bidirectional TVS Diode • ESD protection for high-speed data lines: - IEC 61000 4-2, ESD immunity: - Air discharge: ±9 kV - Contact discharge: ±9 kV - IEC 61000-4-5 (Lightning 8/20 µs): 3 A - IEC 61000-4-4 EFT (5/50 ns): 40 A - Human Body Mode: ±8 kV • Bidirectional TVS • L |
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General Semiconductor |
TVS ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Offers ESD protection in accordance with IEC1000-4-2 (IEC801-2) ♦ Monolithic TVS junctions 0.337(8.55) 0.344(8.75) 14 8 0.150(3.80) 0.157(4.00) 0.228(5.80) 0.244(6. |
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ON Semiconductor |
Bi-directional TVS Array • SO−8 Package • Peak Power − 300 W 8 x 20 mS • ESD Rating: IEC 61000−4−2 (ESD) ±15 kV (air) ±8 kV (contact) IEC 61000−4−4 (EFT) 40 A (5/50 ns) IEC 61000−4−5 (lightning) 12 A (8/20 ms) • UL Flammability Rating of 94 V−0 • These Devices are Pb−Free, |
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ON Semiconductor |
Bi-directional TVS Array • SO−8 Package • Peak Power − 300 W 8 x 20 mS • ESD Rating: IEC 61000−4−2 (ESD) ±15 kV (air) ±8 kV (contact) IEC 61000−4−4 (EFT) 40 A (5/50 ns) IEC 61000−4−5 (lightning) 12 A (8/20 ms) • UL Flammability Rating of 94 V−0 • These Devices are Pb−Free, |
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ON Semiconductor |
Bi-directional TVS Array • SO−8 Package • Peak Power − 300 W 8 x 20 mS • ESD Rating: IEC 61000−4−2 (ESD) ±15 kV (air) ±8 kV (contact) IEC 61000−4−4 (EFT) 40 A (5/50 ns) IEC 61000−4−5 (lightning) 12 A (8/20 ms) • UL Flammability Rating of 94 V−0 • These Devices are Pb−Free, |
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ON Semiconductor |
6 Pin Bi-Directional Quad TVS Array http://onsemi.com 6 4 2, 5 3 1 • Bi−directional Protection for Four Lines in a • • • • • • • • • Single SOT−563 Package Peak Power Dissipation − 75 W (8x20 msec Waveform) Low Leakage Current (100 nA @ 12 V) Low Capacitance (< 15 pF) Provides ESD Pr |
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Taiwan Semiconductor |
1500W TVS ● AEC-Q101 qualified ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Mois |
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Taiwan Semiconductor |
1500W TVS ● AEC-Q101 qualified ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Mois |
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Taiwan Semiconductor |
1500W TVS ● AEC-Q101 qualified ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Mois |
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Taiwan Semiconductor |
1500W TVS ● AEC-Q101 qualified ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Mois |
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Alpha & Omega Semiconductors |
TVS Diode - • ESD protection for high-speed data lines: IEC 61000 4-2, ESD immunity: – Air discharge: ±20 kV – Contact Discharge: ±20 kV - IEC 61000-4-5 (Lightning) 8.5 A (8/20 µs) - IEC 61000-4-4 EFT (5/50 ns): 40 A - Human Body Mode: ±8 kV • Bidirectional T |
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Alpha & Omega Semiconductors |
4-Channel Ultra-Low Capacitance TVS Array ESD protection for high-speed data lines: – IEC 61000-4-2, level 4 (ESD) immunity test – Air discharge: ±15 kV; contact discharge: ±12 kV – IEC61000-4-4 (EFT) 40 A (5/50 ns) – IEC61000-4-5 (Lightning) ±3 A (8/20 μs) – Human Body Model (HBM) ±8 kV |
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Alpha & Omega Semiconductors |
Ultra-Low Capacitance TVS Diode Array ● ESD protection for high-speed data lines: – IEC 61000-4-2, level 4 (ESD) immunity test – ± |
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SENSITRON SEMICONDUCTOR |
1500W Unipolar TVS Diode / BENEFITS: Hermetic sealed DO-13 package Category I Metallurgically bonded Parts are hot solder dipped JAN/ JANTX/ JANTXV available per MIL-PRF-19500/500 MAXIMUM RATINGS Operating & Storage Temperature: -65oC to +175oC Junction Temperat |
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General Semiconductor |
TVS ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Offers ESD protection in accordance with IEC1000-4-2 (IEC801-2) ♦ Monolithic TVS junctions 0.337(8.55) 0.344(8.75) 14 8 0.150(3.80) 0.157(4.00) 0.228(5.80) 0.244(6. |
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