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Vaishali Semiconductor |
R-C Thermal Model Parameters 6547 m 6.1489 3.2294 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 2.7730 5.6035 12.5420 6.9783 Foot 617.0550 µ 18.1606 m 73.2626 m 9.1092 m Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not const |
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ON Semiconductor |
Adjustable Constant Current Regulator & LED Driver |
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ON Semiconductor |
Constant Current Regulator & LED Driver • Robust Power Package: 460 mW • Wide Operating Voltage Range • Immediate Turn-On • Voltage Surge Suppressing − Protecting LEDs • UL94−V0 Certified • SBT (Self−Biased Transistor) Technology • Negative Temperature Coefficient • NSV Prefix for Automoti |
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Fairchild Semiconductor |
30V P-Channel MOSFET • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V • Low gate charge (17nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD |
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ON Semiconductor |
Adjustable Constant Current Regulator & LED Driver • Robust Power Package: 1.5 Watts • Adjustable up to 40 mA • Wide Operating Voltage Range • Immediate Turn-On • Voltage Surge Suppressing − Protecting LEDs • AEC−Q101 Qualified and PPAP Capable, UL94−V0 Certified • SBT (Self−Biased Transistor) Techno |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 5 dB min. at 0.5 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 5 dB min. at 3 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / |
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National Semiconductor |
N-Channel FET The LM2737 and LM2737 operate from a low-current 5V bias and can convert from a 2.2V to 16V power rail. Both parts utilize a fixedfrequency, voltage-mode, PWM control architecture and the switching frequency is adjustable from 50kHz to 2MHz by adjus |
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ON Semiconductor |
Constant Current Regulator & LED Driver • Robust Power Package: 460 mW • Wide Operating Voltage Range • Immediate Turn-On |
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ON Semiconductor |
Constant Current Regulator & LED Driver • Robust Power Package: 460 mW • Wide Operating |
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ON Semiconductor |
Constant Current Regulator & LED Driver • Robust Power Package: 1.4 Watts • Wide Operating |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! |
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ON Semiconductor |
Adjustable Constant Current Regulator & LED Driver • Robust Power Package: 2.7 Watts • Adjustable up to 160 mA • Wide Operating Voltage Range • Immediate Turn-On • Voltage Surge Suppressing − Protecting LEDs • UL94−V0 Certified • SBT (Self−Biased Transistor) Technology • Negative Temperature Coeffici |
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ON Semiconductor |
Dual N- and P-Channel FET These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's propretary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance a |
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Fairchild Semiconductor |
Single N-Channel MOSFET 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V RDS(ON) = 0.013 W @ VGS = 4.5 V Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. ' ' ' ' 62 6 |
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ON Semiconductor |
Constant Current Regulator & LED Driver Robust Power Package: 1.4 Watts Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs AEC-Q101 Qualified and PPAP Capable, UL94−V0 Certified SBT (Self−Biased Transistor) Technology Negative Temperatu |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 5 dB min. at 1.0 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Fairchild Semiconductor |
30V Complementary PowerTrench MOSFET • Q1: N-Channel 6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 35 mΩ @ VGS = 4.5V • Q2: P-Channel –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V RDS(on) = 45 mΩ @ VGS = –4.5V DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Q2 5 6 Q1 7 8 |
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ON Semiconductor |
Constant Current Regulator & LED Driver • Robust Power Package: 460 mW • Wide Operating Voltage Range • Im |
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ON Semiconductor |
Constant Current Regulator & LED Driver • Robust Power Package: 460 mW • Wide Operating Voltage Range • Imm |
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Desde 2024. D4U Semiconductor.
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