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Hitachi Semiconductor |
Silicon Diode • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS270A Cathode band Navy Blue Package Code MHD Outline 1 Cat |
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Rectron Semiconductor |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER * * * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage drop High current capability High speed switching High surge capabitity High reliability Guard ring construction on dic Anti-ESD SS20 THRU SS60 SOD-123F .114 (2.9) . |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal |
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Tuofeng Semiconductor |
N-CHANNEL MOSFET ● RDS(ON)=3.8Ω@VGS=10V ● Ultra Low gate charge(tupical 9.0nC) ● Low reverse transfer capacitance(Crss=typical 5.0pF) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability,high ruggedness ■ SYMBOL ■ ORDERING INF ORMATIO |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode use this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the To |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal |
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Siemens Semiconductor |
SOT-23 LED / Diffused q q q q q q colored, diffused package extreme wide-angle LED for use as optical indicator suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) load dump resistant acc. to DIN 40839 Typ Type Emissionsfarbe Color o |
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Siemens Semiconductor |
SIPMOS Small-Signal Transistor s, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.4 0.1 8 10 0.95 1.1 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold v |
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Siemens Semiconductor |
SIPMOS Small-Signal Transistor at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.4 0.1 8 10 0.25 0.45 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold volt |
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E-DA SEMICONDUCTOR |
MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Green 0.165 4.20 0.130 3.30 0.106 2.70 0.09 2.30 0.041 1.05 0.037 0.90 • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Metal to silicon rectifier. majority carrier conduction |
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Taiwan Semiconductor |
Schottky Barrier Surface Mount Rectifier ● AEC-Q101 qualified ● Very low profile - typical height of 0.68mm ● Low power loss, high efficiency ● Ideal for automated placement ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPL |
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Toshiba Semiconductor |
Diode the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test re |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshib |
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Toshiba Semiconductor |
Diode less, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.4 0.1 8 10 0.25 0.45 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold volt |
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Fairchild Semiconductor |
Schottky Rectifier • Glass-Passivated Junctions • High-Current Capability, Low VF Applications • Low Voltage • High-Frequency Inverters • Free Wheeling • Polarity Protection October 2013 Description The SS22-S210 series includes high-efficiency, low power loss, genera |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal |
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Siemens Semiconductor |
Light Emltting Diodes |
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Siemens Semiconductor |
LC SOT-23 LED / Diffused Low Current LED q q q q q q colored, diffused package extrem wide-angle LED for use as optical indicator high luminous intensity at very low currents (typ. 2 mA) suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) Typ Type Emis |
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XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE For general purpose applications These diodes features very low turn-on voltage and fastswitching. These devices are protected by a Pnjunction guard ring against excessive voltage, such as electrostatic discharges. R-1 APPLICATIONS High speed swit |
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Desde 2024. D4U Semiconductor.
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