| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
IGBT • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A • High Input Impedance • Fast Switching: EOFF = 6.5 mJ/ |
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Diotec Semiconductor |
SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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Diotec Semiconductor |
SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D |
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Vishay Semiconductors |
(VDMx10A1) Standard 7-Segment SMD Display • Evenly lighted segments • Grey package surface • Untinted segments • Luminous intensity categorized • Yellow, green, and soft orange categorized for color • Wide viewing angle • Suitable for DC and high peak current DESCRIPTION The VDM.10A1 series |
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Fairchild Semiconductor |
60A Field Stop IGBT • Maximum Junction Temperature : TJ = • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A • Fast Switching : EOFF = 7.5 uJ/A • Tighten Parameter Distribution • RoHS Compliant 175oC • Positive Temperature Co-efficien |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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ON Semiconductor |
IGBT • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • These Devices are Pb−Free and are RoHS Compliant App |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A • High Input Impedance • Fast Switching: EOFF = 7.5 uJ/ |
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ON Semiconductor |
IGBT • FS Trench Technology, Positive Temperature Coefficient • Excellent Switching Performance due to Kelvin Emitter Pin • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • 100% of the Parts Tested for ILM • High Input Impedance • This Device is Pb− |
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ON Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A • High Input Impedance • Fast Switching • These Devices are Pb−Free and are RoHS Compliant Applications • UPS, Welder, PFC www.onsemi.com C G E E C G TO−247−3L |
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Fairchild Semiconductor |
IGBT • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Impedance • RoHS Compliant Applications • Solar Inverter, Welder, |
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Diotec Semiconductor |
SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D |
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Diotec Semiconductor |
SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D |
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Taiwan Semiconductor |
225mW SMD Switching Diode - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) MECHANI |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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Diotec Semiconductor |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
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Desde 2024. D4U Semiconductor.
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