| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
NPN Silicon Darlington Transistor mitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Diode Forward Voltage Delay Time Rise Time Storage Time Fall Time Voltage Storage Time Cross-over Time Test Condition IC = 50mA, IB=0 Min. 300 |
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Fairchild Semiconductor |
NPN Silicon Transistor • High Voltage, High Quality High Speed Switching : tF=0.1µs • WIDE SOA 1 TO-126 2.Collector 3.Base 1. Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Col |
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Fairchild Semiconductor |
NPN Silicon Darlington Transistor mitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Diode Forward Voltage Delay Time Rise Time Storage Time Fall Time Voltage Storage Time Cross-over Time Test Condition IC = 50mA, IB=0 Min. 300 |
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Fairchild Semiconductor |
NPN Silicon Darlington Transistor mitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Diode Forward Voltage Delay Time Rise Time Storage Time Fall Time Voltage Storage Time Cross-over Time Test Condition IC = 50mA, IB=0 Min. 300 |
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EIC discrete Semiconductors |
(SE5x) SURFACE MOUNT HIGH EFFICIENT RECTIFIERS : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SMC (DO-214AB) 0.060(1.52) |
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ON Semiconductor |
Single Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS at VS = "18 V • Input Noise Voltage: 4 nVń ǸHz • DC Voltage Gain: 100000 • AC Voltage Gain: 6000 at 10 kHz • Power Bandwidth: 200 kHz • Slew Rate: 13 V/ms • Large Supply Volta |
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ON Semiconductor |
Single Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS at VS = "18 V • Input Noise Voltage: 4 nVń ǸHz • DC Voltage Gain: 100000 • AC Voltage Gain: 6000 at 10 kHz • Power Bandwidth: 200 kHz • Slew Rate: 13 V/ms • Large Supply Volta |
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ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS • Input Noise Voltage: 5.0 nVń ǸHz (Typical) • DC Voltage Gain: 50000 • AC Voltage Gain: 2200 at 10 kHz • Power Bandwidth: 140 kHz • Slew R |
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EIC discrete Semiconductors |
(SE5x) SURFACE MOUNT HIGH EFFICIENT RECTIFIERS : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SMC (DO-214AB) 0.060(1.52) |
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EIC discrete Semiconductors |
(SE5x) SURFACE MOUNT HIGH EFFICIENT RECTIFIERS : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SMC (DO-214AB) 0.060(1.52) |
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EIC discrete Semiconductors |
(SE5x) SURFACE MOUNT HIGH EFFICIENT RECTIFIERS : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SMC (DO-214AB) 0.060(1.52) |
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EIC discrete Semiconductors |
(SE5x) SURFACE MOUNT HIGH EFFICIENT RECTIFIERS : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SMC (DO-214AB) 0.060(1.52) |
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EIC discrete Semiconductors |
(SE5x) SURFACE MOUNT HIGH EFFICIENT RECTIFIERS : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SMC (DO-214AB) 0.060(1.52) |
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EIC discrete Semiconductors |
(SE5x) SURFACE MOUNT HIGH EFFICIENT RECTIFIERS : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SMC (DO-214AB) 0.060(1.52) |
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EIC discrete Semiconductors |
(SE5x) SURFACE MOUNT HIGH EFFICIENT RECTIFIERS : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SMC (DO-214AB) 0.060(1.52) |
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ON Semiconductor |
Low Voltage Operational Amplifier • Works Down to 1.8 V Supply Voltages • Adjustable Supply Current • Low Noise • Common−mode Includes Both Rails • VOUT Within 100 mV of Both Rails • These are Pb−Free Devices Applications • Portable Precision Instruments • Remote Transducer Amplifier |
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ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS • Input Noise Voltage: 5.0 nVń ǸHz (Typical) • DC Voltage Gain: 50000 • AC Voltage Gain: 2200 at 10 kHz • Power Bandwidth: 140 kHz • Slew R |
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Desde 2024. D4U Semiconductor.
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