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Fairchild Semiconductor |
SCHOTTKY BARRIER RECTIFIER • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection 1 TO220 June 2008 1.Anode 3.Anode 2. Cathode Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR I |
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ON Semiconductor |
Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • Highly Stable |
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Fairchild Semiconductor |
Schottky Barrier Rectifier • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* TA = 25°C u |
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Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current |
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ON Semiconductor |
SCHOTTKY BARRIER RECTIFIER chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Extremely L |
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Fairchild Semiconductor |
Schottky Diodes |
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Mospec Semiconductor |
Schottky Barrier Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low Forward Voltage. Low Switching n |
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Thinki Semiconductor |
Schottky Barrier Rectifiers For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial c |
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ON Semiconductor |
Schottky Diodes only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 second 30 V 20 |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Center-Tap Configuation ·Guardring for Stress protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati |
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ON Semiconductor |
LOW POWER SCHOTTKY ation of the SN74LS85 under all possible logic conditions. The upper 11 lines describe the normal operation under all conditions that will occur in a single device or in a series expansion scheme. The lower five lines describe the operation under abn |
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Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current |
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ON Semiconductor |
Hex Schmitt-Trigger Inverter • Output Drive Capability: 10 LSTTL Loads • Outputs Directly Interface to CMOS, NMOS and TTL • Operating Voltage Range: 2.0 to 6.0 V • Low Input Current: 1.0 mA • High Noise Immunity Characteristic of CMOS Devices • In Compliance With the JEDEC Stand |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·M |
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General Semiconductor |
Schottky Diodes SOD-123 .022 (0.55) ♦ For general purpose applications ♦ These diodes feature very low turnon voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. case with |
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General Semiconductor |
Schottky Diodes ♦ These diodes feature very low turn-on Top View .056 (1.43) .052 (1.33) voltage and fast switching. ♦ These devices are protected by a PN 1 2 max. .004 (0.1) junction guard ring against excessive voltage, such as electrostatic discharges. .007 |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS |
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National Semiconductor |
Hex Inverter Schmitt Trigger Y Y Guaranteed 4000V minimum ESD protection Standard Military Drawing 5962-88752 Commercial 74F14PC Military Package Number N14A Package Description 14-Lead (0 300 Wide) Molded Dual-In-Line 14-Lead Ceramic Dual-In-Line 14-Lead (0 150 Wide) Molde |
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BrightMoon Semiconductor |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS • Low profile surface mount package • Built-in strain relief • High switching speed • Low voltage drop, high efficiency • For use in low voltage high frequency inverters, Free willing, and polarity protection applications • Guarding for over voltage |
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Desde 2024. D4U Semiconductor.
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