| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 1cm2 Unit V 45° 1.0 –0.2 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage |
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Panasonic Semiconductor |
Power Transistors • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equi |
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Panasonic Semiconductor |
Power Transistors • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0± |
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ON Semiconductor |
Schottky Barrier Diode • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure Specifications Absolute Maximum Ratings at Ta=25°C Paramet |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Unit: mm 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 1 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 1cm2 Unit V 45° 1.0 –0.2 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0 –0.2 +0.1 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 0.8 max. 2.5±0.1 2 1 |
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Panasonic Semiconductor |
Power Transistors • High collector-emitter voltage (Base open) VCEO • High collector power dissipation PC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. Unit : mm 8.5±0.2 6.0±0.2 3.4±0. |
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Panasonic Semiconductor |
Power Transistors • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equi |
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Panasonic Semiconductor |
Power Transistors • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equi |
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Panasonic Semiconductor |
Power Transistors • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of smal |
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Panasonic Semiconductor |
Power Transistors • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of smal |
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Panasonic Semiconductor |
Power Transistors • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 14.0±0.5 |
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ON Semiconductor |
Schottky Barrier Diode • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure Specifications Absolute Maximum Ratings at Ta=25°C Paramet |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 1.9±0.2 0.95 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSB013N04MS 40V/40A N-Channel Advanced Power MOSFET V DS 40 V R @DS(on),TYP VGS=10 V 9 mΩ |
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Desde 2024. D4U Semiconductor.
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