ON Semiconductor SA8 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SA872	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor 10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 µA Rg = 50 kΩ f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to em
2	A893A	Hitachi Semiconductor	2SA893A oise figure Cob — 1.8 — — 1.8 NF — 2 10 — 2 Note: 1. The 2SA893/A is grouped by hFE as follows. DE 250 to 500 400 to 800 Max Unit Test conditions —V IC = –1 mA, RBE = ∞ — µA –0.5 µA 800 –0.75 V –0.5 V — MHz — pF VCB = –75 V, IE = 0 VCB = –100
3	FSA8008	Fairchild Semiconductor	Audio Jack Detection and Configuration Switch Accessory Plug-In 3- or 4-Pole Audio Jack Send/End Key Pressed FSA8008 Decreased Timing Functionality FSA8008A for Sensitive Send/End Keys Switch Type MIC VDD 2.5 to 4.4V VIO 1.6 to VDD THD (MIC) 0.01% Typical ESD (Air Gap) 15kV Operating Temperature
4	A893	Hitachi Semiconductor	2SA893 oise figure Cob — 1.8 — — 1.8 NF — 2 10 — 2 Note: 1. The 2SA893/A is grouped by hFE as follows. DE 250 to 500 400 to 800 Max Unit Test conditions —V IC = –1 mA, RBE = ∞ — µA –0.5 µA 800 –0.75 V –0.5 V — MHz — pF VCB = –75 V, IE = 0 VCB = –100
5	FSA8069	Fairchild Semiconductor	Audio Jack  Detection: - Accessory Plug-In - Send / End Key Press - Impedance Detection - Prevents False Detection due to Moisture  VDD: 3.0 V to 4.5 V  VIO: 1.6 V to VDD  THD (MIC): 0.01% Typical  15 kV Air Gap ESD  Detects 7 Steps of Headset Impedance 
6	FSA8029	Fairchild Semiconductor	Audio Jack Send/End Detection Detection Switch Type VDD THD (MIC) ESD (Air Gap) Operating Temperature Package Top Mark Ordering Information Accessory Plug-In 3- or 4-Pole Audio Jack Send / End Key Pressed Microphone & Video 2.5 to 4.3V 0.01% Typical 16kV -40°C to 85°C 10-Lead UM
7	2SA817	Toshiba Semiconductor	Silicon PNP Epitaxial Type Transistor -2 V, IC = -50 mA (Note) hFE (2) VCE = -2 V, IC = -200 mA VCE (sat) IC = -200 mA, IB = -20 mA VBE VCE = -2 V, IC = -5 mA fT VCE = -10 V, IC = -10 mA Cob VCB = -10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 70~140, Y: 120~240 Min Typ.
8	2SA836	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figuer V(BR)EBO I CBO I EBO hFE* 160 — — — — — — VCE(sat) VBE fT Cob NF V V MHz pF dB dB I C = –10 mA, IB = –1 mA VCE = –12
9	2SA879	Panasonic Semiconductor	Silicon NPN triple diffusion planer type Transistor 0.45 –0.1 1.27 +0.2 ˚C ˚C s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector ou
10	KSA812	Fairchild Semiconductor	Low Frequency Amplifier 0.1 -0.1 600 -0.3 -0.65 V V MHz pF Units µA µA hFE Classification Classification hFE O 90 ~ 180 Marking Y 135 ~ 270 G 200 ~ 400 L 300 ~ 600 D1 O hFE grade ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA812 Typical Characteristi
11	SA8V0A	Fairchild Semiconductor	Transient Voltage Suppressors • • • • • Glass passivated junction. 500W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.
12	FSA859	Fairchild Semiconductor	SPDT Analog Switch Power-Off Isolation (VCC=0V) 0.8Ω Maximum On Resistance (RON) for 4.5V VCC 0.25Ω Maximum RON Flatness for 4.5V VCC Broad VCC Operating Range: 1.65V to 5.5V Fast Turn-On and Turn-Off Times Control Input Referenced to VIO Break-Before
13	SA8.5A	Taiwan Semiconductor	Transient Voltage Suppressor Diodes Transient Voltage Suppressor Diodes Voltage Range 5.0 to 170 Volts 500 Watts Peak Power 1.0 Watt Steady State DO-15 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 500W surge capability at 10 X 10us waveform, duty cycl
14	2SA817A	Toshiba Semiconductor	Silicon PNP Epitaxial Type Transistor
15	2SA844	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: C 160 to 320 D 250 to 500 E 400 to 800 V(BR)EBO I CBO I EBO hFE* 160 — — — — VCE(sat) VBE fT Cob V V MHz pF I C = –10 mA, IB = –1 mA VCE = –12 V
16	2SA872A	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor 10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 µA Rg = 50 kΩ f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to em
17	2SA880	Panasonic Semiconductor	SI PNP EPITAXIAL PLANAR TRANSISTOR
18	KSA812	Samsung semiconductor	PNP Transistor
19	SA8.0	General Semiconductor	TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated junction ♦ 500W peak pulse powe
20	SA85	General Semiconductor	TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated junction ♦ 500W peak pulse powe