| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
2SA673 — — — — –0.2 — — Max — — — –0.5 –0.6 320 — V Unit V V V µA V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, I B = –15 mA*2 VCE = –3 V, I C = –10 mA VCE = –3 V, I C = –500 mA*2 VCE = |
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Inchange Semiconductor |
POWER TRANSISTOR itter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V VBEsat Base-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 -30 V hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 |
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Panasonic Semiconductor |
2SA683 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage |
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Fairchild Semiconductor |
Negative-Swing Audio or Video Switch 0.8Ω Typical On Resistance (RON) for +2.7V Supply 0.45Ω Maximum RON Flatness for +2.7V Supply -3db Bandwidth: > 50MHz Low ICCT Current Over an Expanded Control Input Range Packaged in Pb-free 6-Lead MicroPak™ (1.0 x 1.4mm) Power-Off Prote |
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ON Semiconductor |
High-Speed MIPI Switch Low On Capacitance: 7.0 pF Typical Low On Resistance: 7.0 Ω Typical Wide -3db Bandw idth: 1 GHz Typical 24-Lead UMLP (2.5 x 3.4 mm) Package 8 kV ESD Rating; >16 kV Pow er/GND ESD Rating Applications Dual Camera Applications for Cell Phone |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage |
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Inchange Semiconductor |
Silicon PNP Power Transistor ctor-Base Breakdown Voltage IC= -1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff |
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ON Semiconductor |
PNP Transistor • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector −Emitter Voltage MPSA62 MPSA63/64 Collector −Base Voltage MPSA62 MPSA63/64 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipati |
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Central Semiconductor |
PNP Transistor IEBO VEB=8.0V -- -- - - - 100 BVCES IC=100μA 20 - 30 - 30 - 30 - VCE(SAT) IC=10mA, IB=10μA - 1.0 - - -- -- VCE(SAT) IC=100mA, IB=0.1mA -- - 1.5 - 1.5 - 1.5 VBE(ON) VCE=5.0V, IB=10mA - 1.4 - - -- -- VBE(ON) VCE=5.0V, IB=100mA -- - 2 |
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Inchange Semiconductor |
PNP Transistor = -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC C |
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Inchange Semiconductor |
POWER TRANSISTOR SYMBOL PARAMETER CONDITIONS 2SA636 2SA636A MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -2.0 V VBEsat ICBO Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A VCB=-45V; IE=0 -0.8 -2.0 V μA μ |
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Inchange Semiconductor |
POWER TRANSISTOR Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IE=-0.1mA; IC=0 IC=-1.5A |
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Fairchild Semiconductor |
2:1 MIPI Switch Switch Type: 2:1 Signal Types MIPI, DPHY VCC: 2.65 to 4.3 V Input Signals 0 to VCC RON: - 7 Ω Typical HS MIPI - 10 Ω Typical LS MIPI ∆RON: 0.75 Ω Typical HS & LS MIPI ICC: 1 µA Maximum OIRR: -50 dB Typical XTALK: -40 dB Typical Ba |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor — — — — –0.2 — — Max — — — –0.5 –0.6 320 — V Unit V V V µA V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, I B = –15 mA*2 VCE = –3 V, I C = –10 mA VCE = –3 V, I C = –500 mA*2 VCE = |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage |
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Samsung semiconductor |
PNP Transistor |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Low Frequency Power Amplifier • Collector Power Dissipation : PC = 500 mW • Complement to KSD261 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) • Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector) 123 St |
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General Semiconductor |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated junction ♦ 500W peak pulse powe |
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Inchange Semiconductor |
Silicon PNP Transistor -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Cu |
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Central Semiconductor |
PNP Transistor IEBO VEB=8.0V -- -- - - - 100 BVCES IC=100μA 20 - 30 - 30 - 30 - VCE(SAT) IC=10mA, IB=10μA - 1.0 - - -- -- VCE(SAT) IC=100mA, IB=0.1mA -- - 1.5 - 1.5 - 1.5 VBE(ON) VCE=5.0V, IB=10mA - 1.4 - - -- -- VBE(ON) VCE=5.0V, IB=100mA -- - 2 |
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Desde 2024. D4U Semiconductor.
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