| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP Semiconductors |
2.1 W/channel stereo class-D audio amplifier independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start |
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Fairchild Semiconductor |
Transient Voltage Supressors • Glass passivated junction. • 500W Peak Pulse Power capability on 10/1000 µs waveform. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5. |
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NXP Semiconductors |
2.1 W/channel stereo class-D audio amplifier independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start |
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Fairchild Semiconductor |
Single Timer • • • • • High Current Drive Capability (200mA) Adjustable Duty Cycle Temperature Stability of 0.005%/°C Timing From µSec to Hours Turn off Time Less Than 2µSec Description The LM555/NE555/SA555 is a highly stable controller capable of producing acc |
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Toshiba Semiconductor |
Silicon PNP Transistor = -100 mA (Note) hFE (2) VCE = -6 V, IC = -400 mA (Note) VCE (sat) VBE fT Cob IC = -100 mA, IB = -10 mA VCE = -1 V, IC = -100 mA VCE = -6 V, IC = -20 mA VCB = -6 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 70~140, Y: 120~240 hFE (2) clas |
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Inchange Semiconductor |
Silicon PNP Power Transistor kdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5; IC= |
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ON Semiconductor |
Single Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS at VS = "18 V • Input Noise Voltage: 4 nVń ǸHz • DC Voltage Gain: 100000 • AC Voltage Gain: 6000 at 10 kHz • Power Bandwidth: 200 kHz • Slew Rate: 13 V/ms • Large Supply Volta |
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Central Semiconductor |
COMPLEMENTARY SILICON TRANSISTORS |
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Digitron Semiconductors |
TRANSIENT VOLTAGE SUPPRESSORS • Available as “HR” (high reliability) screened per MIL‐PRF‐19500, JANTX level. Add “HR” suffix to base part number. • Available Non‐RoHS (standard) or RoHS compliant (add PBF suffix). • For bi‐directional construction, indicate a “C” or “CA” suff |
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Digitron Semiconductors |
TRANSIENT VOLTAGE SUPPRESSORS • Available as “HR” (high reliability) screened per MIL‐PRF‐19500, JANTX level. Add “HR” suffix to base part number. • Available Non‐RoHS (standard) or RoHS compliant (add PBF suffix). • For bi‐directional construction, indicate a “C” or “CA” suff |
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Fairchild Semiconductor |
DEVICES FOR BIPOLAR APPLICATIONS • • • • • Glass passivated junction. 500W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5. |
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General Semiconductor |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated junction ♦ 500W peak pulse powe |
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Fairchild Semiconductor |
Transient Voltage Suppressors • • • • • Glass passivated junction. 500W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5. |
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General Semiconductor |
Small Signal Transistors ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the NPN transistor MPSA06 is recommended. ♦ On special request, this transistor is also manufactured in the pin configuration TO-18. ♦ This t |
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ON Semiconductor |
Compandor http://onsemi.com MARKING DIAGRAMS 16 16 1 SOIC−16 WB D SUFFIX CASE 751G SA571D AWLYYWWG • • • • • • • • • • • • • • Complete Compressor and Expandor in one IChip Temperature Compensated Greater than 110 dB Dynamic Range Operates Down to 6.0 VDC S |
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ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS • Input Noise Voltage: 5.0 nVń ǸHz (Typical) • DC Voltage Gain: 50000 • AC Voltage Gain: 2200 at 10 kHz • Power Bandwidth: 140 kHz • Slew R |
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NXP Semiconductors |
remote/local digital temperature sensor • Accurately senses temperature of remote microprocessor thermal • On-chip local temperature sensing • 11-bit, 0.125 °C resolution • 8 different device addresses are available for server applications. • Offset registers available for adjusting the r |
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Toshiba Semiconductor |
2SA510 • High Breakdown Voltage : VcEO=-100V : VcEO=-60V • Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.) • Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYM |
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ON Semiconductor |
Single Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS at VS = "18 V • Input Noise Voltage: 4 nVń ǸHz • DC Voltage Gain: 100000 • AC Voltage Gain: 6000 at 10 kHz • Power Bandwidth: 200 kHz • Slew Rate: 13 V/ms • Large Supply Volta |
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Taiwan Semiconductor |
Transient Voltage Suppressor Diodes Transient Voltage Suppressor Diodes Voltage Range 5.0 to 170 Volts 500 Watts Peak Power 1.0 Watt Steady State DO-15 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 500W surge capability at 10 X 10us waveform, duty cycl |
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Desde 2024. D4U Semiconductor.
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