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ON Semiconductor |
Schottky Barrier Diode • Extremely Fast Switching Speed • Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA • Low Reverse Current • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Cap |
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ON Semiconductor |
Schottky Barrier Diode RKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Leakage (VR = 10 V) Forward Voltage (IF = 200 mA) Symbol IR VF Min − − Typ − − Max 30.0 0.50 Unit mA Vdc 5Md 5M = Specific Device Code d = Date Code |
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Holtek Semiconductor |
A/D Type USB 8-Bit MCU · Operating voltage: · 6-level subroutine nesting · 8 channels 10-bit resolution A/D converter · 2-channel 8-bit PWM output shared with two I/O lines · SIO (synchronous serial I/O) function · Supports Interrupt, Control, Bulk transfer · USB 1.1 full |
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Taiwan Semiconductor |
Low VF SMD Schottky Barrier Diode - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level (MSL): 1 - Packing code with suffix "G" means green compound (halogen-free) SOD-323F RB500V-40 Taiwan Semiconductor MECHANICAL DATA - Case: |
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ON Semiconductor |
Schottky Barrier Diode • Extremely Fast Switching Speed • Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA • Low Reverse Current • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Cap |
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ON Semiconductor |
Schottky Barrier Diode • Extremely Fast Switching Speed • Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA • Low Reverse Current • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Cap |
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ON Semiconductor |
Schottky Barrier Diode RKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Leakage (VR = 10 V) Forward Voltage (IF = 200 mA) Symbol IR VF Min − − Typ − − Max 30.0 0.50 Unit mA Vdc 5Md 5M = Specific Device Code d = Date Code |
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Zetex Semiconductors |
PRECISION 5.0 VOLT MICROPOWER VOLTAGE REFERENCE ZRB500 • • • • • • • • • • • • • • • Small outline SOT23,SO8 and TO92 style packages No stabilising capacitor required Typical TC 15ppm/ °C Typical slope resistance 0.33Ω ± 3%, 2% and 1% tolerance Industrial temperature range Operating current 50µ |
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Fairchild Semiconductor |
Schottky Barrier Diodes • Low Forward Voltage Drop • Flat Lead, Surface Mount Device Under 0.70mm Height • Extremely Small Outline Plastic Package SOD523F Cathode Anode • Moisture Level Sensitivity 1 • Pb-free Version and RoHS Compliant ELECTRICAL SYMBOL • Matte Tin |
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Fairchild Semiconductor |
Schottky Barrier Diodes |
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ON Semiconductor |
Schottky Barrier Diode http://onsemi.com • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) @ IF = 200 mA Low Reverse Current ESD Rating: Class 3B per Human Body Model Class C per Machine Model These are Pb−Free Devices 30 VOLT SCHOTTKY |
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NXP Semiconductors |
100 mA low VF MEGA Schottky barrier rectifier and benefits Average forward current: IF(AV) ≤ 100 mA Reverse voltage: VR ≤ 30 V Low forward voltage: VF ≤ 350 mV Low reverse current: IR ≤ 10 μA AEC-Q101 qualified Leadless ultra small SMD plastic package 1.3 Applications Low |
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Taiwan Semiconductor |
Surface Mount Schottky Barrier Diode Small plastic SMD package Ultra low VF, VF=0.45 typ. at 0.5A High reliability 0.037(0.95) Max. SOD-323 0.010(0.25) Typ. Min. Mechanical Data Case: SOD-323, Plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: Cathode Band Marking: D |
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Taiwan Semiconductor |
SMD Schottky Barrier Diode - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packin |
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Taiwan Semiconductor |
Schottky Barrier Diode - Surface Mount Device Type - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code RB551V-40 Taiwan Semiconductor MECHANICAL DATA - Case: Bend lead SOD-323 small outline plastic pack |
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Taiwan Semiconductor |
Low VF SMD Schottky Barrier Diode - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level (MSL): 1 - Packing code with suffix "G" means green compound (halogen-free) RB520G-30 Taiwan Semiconductor SOD-723F MECHANICAL DATA - Case: |
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Taiwan Semiconductor |
SMD Schottky Barrier Diode Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on p |
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ON Semiconductor |
Schottky Barrier Diode • Extremely Fast Switching Speed • Extremely Low Forward Voltage 0.6 V (max) @ IF = 200 mA • Low Reverse Current • ESD Rating: Class 3B per Human Body Model Class C per Machine Model • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Com |
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ON Semiconductor |
Schottky Barrier Diode • Extremely Fast Switching Speed • Extremely Low Forward Voltage 0.6 V (max) @ IF = 200 mA • Low Reverse Current • ESD Rating: Class 3B per Human Body Model Class C per Machine Model • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Com |
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Desde 2024. D4U Semiconductor.
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