| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistors nless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 PZT 2222 PZT 2222 A Collector-base breakdown voltage IC = 10 µA, IB = 0 PZT 2222 PZT 2222 A Emitter-base breakdown voltage IE = |
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ON Semiconductor |
High Voltage Transistor • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM |
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Siemens Semiconductor Group |
PNP Silicon Switching Transistor C = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 Collector-emitter cutoff current VCE = 30 V, + VBE = 0.5 V Collector-base cutoff c |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A Low profile: 0.55 mm maximum in the new package Mic |
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ON Semiconductor |
HIGH CURRENT NPN SILICON TRANSISTOR (TC = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCB |
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ON Semiconductor |
PNP Transistor http://onsemi.com thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die www.DataSheet4U.com • NPN Complement is PZT651T1 • Pb−Fr |
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Siemens Semiconductor Group |
NPN Silicon High-Voltage Transistors pecified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 PZTA 42 PZTA 43 Collector-base breakdown voltage IC = 100 µA, IB = 0 PZTA 42 PZTA 43 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector |
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ON Semiconductor |
PNP General-Purpose Amplifier |
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ON Semiconductor |
Dual P-Channel MOSFET two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses. When connected in the typical common source configuration, bi−directional current flow is possible. The MicroFET 1.6 y 1.6 Thin package offers exceptional t |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin HBM ESD protection level > 2 |
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Siemens Semiconductor Group |
PNP Silicon Switching Transistors |
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Fairchild Semiconductor |
PNP General Purpose Amplifier ory should be consulted on applications involving pulsed or low duty cycle operations. ã 1997 Fairchild Semiconductor Corporation PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A PNP General Purpose Amplifier (continued) Electrical Characteris |
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ON Semiconductor |
High Voltage Transistor • PZTA42T1G is Complement to PZTA92T1G • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Complia |
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Fairchild Semiconductor |
PNP Amplifier function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The ab |
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Fairchild Semiconductor |
NPN High Voltage Amplifier • This device is designed for application as a video output and other high-voltage applications. • Sourced from process 48. MPSA42 MMBTA42 C PZTA42 C EBC TO-92 E B SOT-23 Mark: 1D E C B SOT-223 Ordering Information Part Number MPSA42 MMBTA |
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Fairchild Semiconductor |
PNP General Purpose Amplifier TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -80 -80 -4.0 -500 -55 to +150 Unit V V V mA °C Notes: 1. These ratings are |
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Siemens Semiconductor Group |
PNP Silicon Darlington Transistors ics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-b |
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Fairchild Semiconductor |
PNP Darlington Transistor TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient MPSA65 625 5.0 83.3 200 Max *MMBTA65 350 2.8 357 *De |
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Siemens Semiconductor Group |
PNP Silicon High-Voltage Transistors pecified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 PZTA 92 PZTA 93 Collector-base breakdown voltage IC = 100 µA, IB = 0 PZTA 92 PZTA 93 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector |
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Fairchild Semiconductor |
Dual P-Channel MOSFET Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A Low Profile-0.55 mm maximum - in the new p |
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Desde 2024. D4U Semiconductor.
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