| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
Self-Supplied Monolithic Switcher • Built−in 700 V MOSFET with Typical RDSon of 11 W and 22 W • Large Creepage Distance Between High−Voltage Pins • Current−Mode Fixed Frequency Operation: 65 kHz – 100 kHz − 130 kHz • Skip−Cycle Operation at Low Peak Currents Only: No Acoustic Noise! |
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ON Semiconductor |
Self-Supplied Monolithic Switcher • Built−in 700 V MOSFET with Typical RDSon of 11 W and 22 W • Large Creepage Distance Between High−Voltage Pins • Current−Mode Fixed Frequency Operation: 65 kHz – 100 kHz − 130 kHz • Skip−Cycle Operation at Low Peak Currents Only: No Acoustic Noise! |
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ON Semiconductor |
Self-Supplied Monolithic Switcher • Built−in 700 V MOSFET with Typical RDSon of 11 W and 22 W • Large Creepage Distance Between High−Voltage Pins • Current−Mode Fixed Frequency Operation: 65 kHz – 100 kHz − 130 kHz • Skip−Cycle Operation at Low Peak Currents Only: No Acoustic Noise! |
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ON Semiconductor |
PWM Current-Mode Controller • No Auxiliary Winding Operation • Internal Output Short−Circuit Protection • Extremely Low No−Load Standby Power • Current−Mode with Skip−Cycle Capability • Internal Leading Edge Blanking • 250 mA Peak Current Source/Sink Capability • Internally Fix |
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Fairchild Semiconductor |
FQP10N20C • • • • • • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! |
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Cypress Semiconductor |
5V/ 3.3V/ ISR High-Performance CPLDs • In-System Reprogrammable™ (ISR™) CMOS CPLDs — JTAG interface for reconfigurability — Design changes do not cause pinout changes — Design changes do not cause timing changes • High density — 32 to 512 macrocells — 32 to 264 I/O pins — Five dedicated |
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General Semiconductor |
FAST SWITCHING PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Construction utilizes void-free molded plastic technique ♦ 1.0 Ampere operation at TA=55°C with no thermal runaway ♦ Fast switching for |
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ON Semiconductor |
PWM Current-Mode Controller an efficient protective circuitry which, in presence of an overcurrent condition, disables the output pulses while the device enters a safe burst mode, trying to restart. Once the default has gone, the device auto−recovers. Features 8 1 http://onsem |
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Filtronic Compound Semiconductors |
PACKAGED 2W POWER PHEMT ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP3000P100 • DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • –3.3 A, –20V RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series |
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ON Semiconductor |
Integrated IEEE 802.3at PoE-PD Interface Controller • Fully Supports IEEE 802.3af/at Specifications • Programmable Classification Current • Support Two Event Classification−Signature • Adjustable Under Voltage Lock Out (NCP1093 Only) • Open−Drain Power Good Indicator • 120 mA Typical Inrush Current Li |
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ON Semiconductor |
High-Voltage Switcher include: a timer to detect an overload or a short−circuit event, Overvoltage Protection with auto−recovery and AC input line voltage detection. For improved standby performance, the connection of an auxiliary winding stops the DSS operation and helps |
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Fairchild Semiconductor |
VHF/UHF transistor rrent Gain Bandwidth Product Output Capacitance Collector Base Feedback Capacitance Collector Base Time Constant Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=10V, IC=4mA IC=4mA, IB=0.4mA VCE=10V, IC=4mA VCE= |
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Fairchild Semiconductor |
P-Channel Switch age Current Drain-Gate Leakage Current Zero-Gate Voltage Drain Current Gate-Source Cutoff Voltage Drain-Source On Voltage Drain-Source On Resistance Drain-Source On Resistance Input Capacitance Reverse Transfer Capacitance Trun On Time Rise Time Trun |
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Fairchild Semiconductor |
P-Channel Switch age Current Drain-Gate Leakage Current Zero-Gate Voltage Drain Current Gate-Source Cutoff Voltage Drain-Source On Voltage Drain-Source On Resistance Drain-Source On Resistance Input Capacitance Reverse Transfer Capacitance Trun On Time Rise Time Trun |
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ON Semiconductor |
NCP1014AP http://onsemi.com MARKING DIAGRAMS 8 1 PDIP−7 CASE 626A AP SUFFIX 1 PDIP−7 (Gull Wing) CASE 626AA APL SUFFIX 1 P101xAPyy AWL YYWW 1 101xAPLyy AWL YYWW 4 4 1 SOT−223 CASE 318E ST SUFFIX 1 101xy ALYW x yy y = Current Limit (0, 1, 2, 3, 4) = |
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ON Semiconductor |
Self-Supplied Monolithic Switcher • Built−in 700 V MOSFET with Typical RDSon of 11 W and 22 W • Large Creepage Distance Between High−Voltage Pins • Current−Mode Fixed Frequency Operation: 65 kHz – 100 kHz − 130 kHz • Skip−Cycle Operation at Low Peak Currents Only: No Acoustic Noise! |
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ON Semiconductor |
Silicon NPN Transistor • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107 • Low Collector−Emitter Saturation |
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Maple Semiconductor |
Silicon Carbide Diode -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power |
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Desde 2024. D4U Semiconductor.
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