| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
Four Output PCI-X and General Purpose Buffer • One Input to Four Output Buffer/Driver • General−purpose or PCI−X Clock Buffer • Buffers All Frequencies from DC to 140 MHz • Output−to−Output Skew less than 100 pS • Available in 8−pin TSSOP and SOIC Packages • 3.3 V Operation • These Devices are |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 850 m (Typ.) @ VGS = 10 V, ID = 3.25 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterrupt |
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ON Semiconductor |
Four Output PCI-X and General Purpose Buffer • One Input to Four Output Buffer/Driver • General−purpose or PCI−X Clock Buffer • Buffers All Frequencies from DC to 140 MHz • Output−to−Output Skew less than 100 pS • Available in 8−pin TSSOP and SOIC Packages • 3.3 V Operation • These Devices are |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.57 (Typ.) @ VGS = 10 V, ID = 2.1 A • Low Gate Charge (Typ. 9 nC) • Low Crss (Typ. 4 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterrupti |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A • Low Gate Charge (Typ. 9 nC) • Low Crss (Typ. 4 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninter |
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ON Semiconductor |
EMI Filter with ESD Protection • • • • • • EMI/RFI Bi –directional “Pi” Low –Pass Filters ESD Protection Meets IEC61000 –4 –2 Diode Capacitance: 7 – 10 pF Zener/Resistor Line Capacitance: 22 ±20% pF Low Zener Diode Leakage: 1 mA Maximum Zener Breakdown Voltage; 6 – 8 Volts http:// |
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ON Semiconductor |
EMI Filter • 2 EMI/RFI Bi−directional “Pi” Low−Pass Filters • ESD Protection Meets IEC61000−4−2 • Diode Capacitance: 7 − 10 pF • Zener/Resistor Line Capacitance: 22 ±20% pF • Low Zener Diode Leakage: 1 mA Maximum • Zener Breakdown Voltage; 6 − 8 V • AEC−Q101 Qu |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) • Low Crss ( Typ. 5pF) • Fast Switching • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Description This N-Channel enhance |
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ON Semiconductor |
EMI Filter • 2 EMI/RFI Bi−directional “Pi” Low−Pass Filters • ESD Protection Meets IEC61000−4−2 • Diode Capacitance: 7 − 10 pF • Zener/Resistor Line Capacitance: 22 ±20% pF • Low Zener Diode Leakage: 1 mA Maximum • Zener Breakdown Voltage; 6 − 8 V • AEC−Q101 Qu |
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Desde 2024. D4U Semiconductor.
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