| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
N-Channel Power MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C674NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capabl |
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ON Semiconductor |
Power MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C645NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capabl |
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ON Semiconductor |
N-Channel MOSFET • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant A |
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ON Semiconductor |
Dual N-Channel Power MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capabl |
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ON Semiconductor |
N-Channel Power MOSFET • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant Applicatio |
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ON Semiconductor |
Power MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6B75NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable |
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ON Semiconductor |
N-Channel MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and |
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ON Semiconductor |
N-Channel MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and |
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ON Semiconductor |
N-Channel Power MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are |
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ON Semiconductor |
N-Channel Power MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS021N10MCL − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capab |
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ON Semiconductor |
N-Channel Power MOSFET • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applica |
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ON Semiconductor |
N-Channel Power MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5H610NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capabl |
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ON Semiconductor |
N-Channel Power MOSFET • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant App |
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ON Semiconductor |
Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices* ht |
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ON Semiconductor |
N-Channel MOSFET • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.048 W, VGS = 10 V (Typ) − RDS(on) = 0.065 W, VGS = 4.5 V (Typ) • Miniature SO−8 Surface M |
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ON Semiconductor |
Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices* http://onsemi.com |
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ON Semiconductor |
Power MOSFET • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.024 W, VGS = 10 V (Typ) − RDS(on) = 0.030 W, VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface |
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ON Semiconductor |
Power MOSFET • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface |
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ON Semiconductor |
Dual N-Channel Power MOSFET • Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • 175°C Operating Temperature • NVMFD5483NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qu |
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ON Semiconductor |
Dual N-Channel Power MOSFET • Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • 175°C Operating Temperature • NVMFD5485NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qu |
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Desde 2024. D4U Semiconductor.
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