| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS • Input Noise Voltage: 5.0 nVń ǸHz (Typical) • DC Voltage Gain: 50000 • AC Voltage Gain: 2200 at 10 kHz • Power Bandwidth: 140 kHz • Slew R |
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Panasonic Semiconductor |
1024-Stage Low Voltage Operation / Low Noise BBD for Analog Signal Delays |
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ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS • Input Noise Voltage: 5.0 nVń ǸHz (Typical) • DC Voltage Gain: 50000 • AC Voltage Gain: 2200 at 10 kHz • Power Bandwidth: 140 kHz • Slew R |
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National Semiconductor |
30mA low noise transistors [I] package and lead coding Z -vQ. • 35 to 50 Volt at 30mA collector ratings Z • 300mV guaranteed VCE (sat) characteristics at Ic = 1OmA and Is = 0.5mA o~ • ldB typical wide-band Noise Figure ('I")' • "Epoxy B" packaging concept for excellent reli |
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National Semiconductor |
Single/Dual/Quad / Low Offset / Low Noise / RRO Operational Amplifiers (Typical 2.7V Supply Values; Unless Otherwise Noted) n Guaranteed 2.7V and 5V specifications n Maximum VOS (LMV771) 850µV (limit) n Voltage Noise — f = 100Hz 12.5nV/ — f = 10kHz 7.5nV/ n Rail-to-Rail output swing — w/600Ω load 100mV from rail — w/2kΩ |
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National Semiconductor |
Micropower 800mA Low Noise Ceramic Stable Voltage Regulator n Standard output voltage: 1.00V n Custom voltages available from 1.0V to 1.2V (50 mV increments) n Input voltage: 2.2 to 6.0V n 1% initial output accuracy n Guaranteed 800 mA continuous output current n Designed for use with low ESR ceramic capacito |
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Fairchild Semiconductor |
Low Frequency / Low-Noise Amplifier C =0 VCB = -50V, IE =0 VEB = -5V, IC =0 VCE = -5V, IC = -1mA IC = -100mA, IB = -5mA IC = -100mA, IB = -5mA VCE = -5V, IC = -2mA VCB = -10V, IE =0 f=1MHz VCE = -5V, IC = -10mA VCE = -5V, IC = -0.2mA f=1KHz, RS=1KΩ 100 -0.6 60 200 -0.2 -0.82 -0.65 4.5 |
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Zarlink Semiconductor |
Very Low Phase Noise I Very low Phase Noise (Typically -160dBc/Hz at 1kHz offset) I Supply Voltage 5V N/C N/C N/C VCC +5V GND CLOCK INPUT CLOCK INPUT CLOCK INPUT CLOCK INPUT GND VCC +5V VCC +5V N/C MODULUS CONTROL 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 |
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NXP Semiconductors |
SiGe:C Low Noise Amplifier MMIC and benefits AEC-Q100 qualified (see Section 9.1) Covers full GNSS L1 band, from 1559 MHz to 1610 MHz Noise figure (NF) = 0.85 dB and gain (Gp) = 18.5 dB High input 1 dB compression point Pi(1dB) of 12 dBm High out of band IP3i of 4 dBm |
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Comset Semiconductors |
(BC107 - BC109) Low noise general purpose audio amplifiers 8 BC109 Min - Typ - Max 15 Unit nA ICBO Collector Cutoff Current VCB = 20 V IE = 0 V Tj = 150°C VEB = 5 V IC = 0 IC = 10 mA IB = 0 IC = 10 µA VBE = 0 - - 15 µA IEBO Emitter Cutoff Current Collector-Emitter Breakdown Voltage Collector-Bas |
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Hexin Semiconductor |
Low Noise Regulated Charge Pump Fixed 3.3V or 5V Outputs VIN Range: 1.8V to 4.5V(HX4002-3.3) 2.7V to 5.5V(HX4002-5) Output Current: Up to 200mA (HX4002-5) Up to 50mA (HX4002-3.3) Constant Frequency Operation at All Loads Low Noise Constant Frequency (1.2MHz) Operation Shutdown Disc |
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National Semiconductor |
Micropower 800mA Low Noise Ceramic Stable Voltage Regulator n Standard output voltage: 1.00V, 1.20V n Custom voltages available from 1.0V to 1.2V (50 mV increments) n Input voltage: 2.5 to 6V n 1% initial output accuracy n Designed for use with low ESR ceramic capacitors n Very low output noise n Sense option |
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Comset Semiconductors |
(BC107 - BC109) Low noise general purpose audio amplifiers 8 BC109 Min - Typ - Max 15 Unit nA ICBO Collector Cutoff Current VCB = 20 V IE = 0 V Tj = 150°C VEB = 5 V IC = 0 IC = 10 mA IB = 0 IC = 10 µA VBE = 0 - - 15 µA IEBO Emitter Cutoff Current Collector-Emitter Breakdown Voltage Collector-Bas |
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Hitachi Semiconductor |
Dolby B-Type Noise Reduction Functions • Dual Dolby B-type NR processor • NR ON/OFF control switch. • Record (encode)/playback (decode) control switch. Features • Separate record/playback input and output. Unprocessed signal output available in the encode and decode modes. • |
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Hitachi Semiconductor |
GaAs MMIC Low Noise Amplifier for Micro Wave Application • • • • • • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built –in matching circuits (50Ω) Small |
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Siemens Semiconductor Group |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.) ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz ESA Qualification pending Micro-X1 ESD: Elec |
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ON Semiconductor |
2.5V / 3.3V Low Noise Multi-Rate Clock Generator • Flexible Input Reference − 25 MHz Crystal, Oscillator, • 1 ps maximum RMS Phase Jitter FRAC−N (CLK4) Single−Ended or Differential Clock 161.1328 MHz • Four Independent User−Programmable Clock • I2C / SMBus Compatible Interface Frequencies fr |
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Siemens Semiconductor Group |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS |
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National Semiconductor |
Dual Wideband / Low Noise / Voltage Feedback Op Amp n n n n n n n Wide unity gain bandwidth: 300MHz Low noise: 2nV/ Low Distortion: −65/−74dBc (10MHz) Settling time: 12ns to 0.1% Wide supply voltage range: ± 2.5V to ± 6V High output current: ± 85mA Improved replacement for CLC428 Applications n n n n |
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TriQuint Semiconductor |
GaAs Low Noise Amplifier • Frequency Range: 22 – 32 GHz • Noise Figure: 1.6 dB (typical) • Small Signal Gain: 23 dB (typical) • P1dB: 19 dBm (typical) • IM3: −54 dBc (Pout=0 dBm/tone) (typical) • Bias: VD = 3.5 V, IDQ = 90 mA, VG = −0.46 V (typical) • Plastic Overmolded Pack |
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Desde 2024. D4U Semiconductor.
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