| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
Surface Mount Ultrafast Power Rectifier • Fast Soft Switching for Reduced EMI and Higher Efficiency • Low Profile − Maximum Height of 1.1 mm • Small Footprint − Footprint Area of 13.5 mm2 • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen |
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ON Semiconductor |
Surface Mount Ultrafast Power Rectifier • Fast Soft Switching for Reduced EMI and Higher Efficiency • Low Profile − Maximum Height of 1.0 mm • Small Footprint − Footprint Area of 5.94 mm2 • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen |
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ON Semiconductor |
Surface Mount Ultra Fast Power Rectifier |
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ON Semiconductor |
Ultra Fast Power Rectifier • Fast Soft Switching for Reduced EMI and Higher Efficiency • Low Profile − Maximum Height of 1.1 mm • Small Footprint − Footprint Area of 8.45 mm2 • Supplied in 12 mm Tape and Reel • Low Thermal Resistance with Direct Thermal Path of Die on Exposed |
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ON Semiconductor |
Surface Mount Ultra Fast Power Rectifier • Fast Soft Switching for Reduced EMI and Higher Efficiency • Low Profile − Maximum Height of 1.1 mm • Small Footprint − Footprint Area of 8.45 mm2 • Supplied in 12 mm Tape and Reel • Low Thermal Resistance with Direct Thermal Path of Die on Exposed |
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ON Semiconductor |
Surface Mount Ultra Fast Power Rectifier • Fast Soft Switching for Reduced EMI and Higher Efficiency • Low Profile − Maximum Height of 1.1 mm • Small Footprint − Footprint Area of 13.5 mm2 • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen |
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ON Semiconductor |
Switch-mode Power Rectifiers • Ultrafast 30 Nanosecond Recovery Time • 150°C Operating Junction Temperature • High Voltage Capability of 600 V • Low Forward Drop • Low Leakage Specified @ 125°C Case Temperature • This Device is Pb−Free and RoHS Compliant Mechanical Characteristi |
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ON Semiconductor |
Ultrafast Power Rectifier • Fast Soft Switching for Reduced EMI and Higher Efficiency • Low Profile − Maximum Height of 1.0 mm • Small Footprint − Footprint Area of 5.94 mm2 • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen |
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ON Semiconductor |
Ultrafast Power Rectifier • Fast Soft Switching for Reduced EMI and Higher Efficiency • Low Profile − Maximum Height of 1.0 mm • Small Footprint − Footprint Area of 5.94 mm2 • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen |
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ON Semiconductor |
Power Rectifier • New Package Provides Capability of Inspection and Probe After Board Mounting • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; |
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ON Semiconductor |
Surface Mount Ultrafast Power Rectifier • Fast Soft Switching for Reduced EMI and Higher Efficiency • Low Profile − Maximum Height of 1.0 mm • Small Footprint − Footprint Area of 5.94 mm2 • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen |
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ON Semiconductor |
Power Rectifier • Ultrafast 30 Nanosecond Recovery Time • 175°C Operating Junction Temperature • High Voltage Capability of 600 V • Low Forward Drop • Low Leakage Specified @ 125°C Case Temperature • NRV Prefix for Automotive and Other Applications Requiring Unique |
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ON Semiconductor |
Power Rectifiers • Ultrafast 30 Nanosecond Recovery Time • 150°C Operating Junction Temperature • High Voltage Capability of 600 V • ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3A • Low Forward Drop • Low Leakage Specified @ 125°C Case Temperature • These D |
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ON Semiconductor |
Power Rectifiers • Ultrafast 30 Nanosecond Recovery Time • 150°C Operating Junction Temperature • High Voltage Capability of 600 V • ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3A • Low Forward Drop • Low Leakage Specified @ 125°C Case Temperature • These D |
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Desde 2024. D4U Semiconductor.
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